Mode MOSFET. SSC8013GSB Datasheet

SSC8013GSB MOSFET. Datasheet pdf. Equivalent

SSC8013GSB Datasheet
Recommendation SSC8013GSB Datasheet
Part SSC8013GSB
Description P-Channel Enhancement Mode MOSFET
Feature SSC8013GSB; SSC8013GSB P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Appli.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8013GSB
SSC8013GSB
P-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
38mR@-4V5
ID
Applications
Load Switch
Portable Devices
DCDC conversion
-12V ±8V 47mR@-2V5 -5A
61mR@-1V8
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
D: Drain; G: Gate; S: Source
electrical capabilities.
Package Information
⑥ ⑤④
①②
Units:mm
SOT23-6L
SSC-4V0
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AFSEMI SSC8013GSB
SSC8013GSB
Absolute Maximum Ratings @TA=25unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Continuous)
ID
Drain Current (Pulse)
IDM
Power Dissipation
25
70
PD25
PD70
Operating Temperature/ Storage Temperature
TJ//TSTG
Ratings
-12
±8
-5
-20
1000
550
-55~150
Electrical Characteristics @TA=25unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID=-10uA
-12 --
Drain Cut-off Current
IDSS
VDS = -12 V , VGS = 0V
-- --
Gate-Source Leakage Current
IGSS
VGS =±8 V , VDS = 0V
-- --
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th )
ID = -250 uA , VDS = VGS
-0.45 -0.62
VGS = -4.5V ,ID =-3.5 A
-- 38
Drain-Source On-state Resistance
RDS(on)
VGS = -2.5V , ID = -3A
-- 47
VGS = -1.8V , ID = -2A
61
Forward Transconductance
gFS
VDS = -5V, ID = -3.5A
-- 9.5
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
Ciss -- 1060
VDS = -4V , VGS = 0V
Coss
-- 273
f = 1 MHz
Crss -- 252
SWITCHING CHARACTERISTICS
Turn-on Delay Time
td ( on )
VDD = -6V , RL = 6R,ID = -1.0A,
--
13
Turn-off Delay Time
td( off )
VGEN = -4.5V, RG = 6R
-- 42
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
VSD
Is = -1.6A, VGS = 0V
-0.5 -0.75
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test: PW≤300us, duty cycle≤2%.
3. For design AID only, not subject to production testing.
4. Switching time is essentially independent of operating temperature.
Unit
V
V
A
A
mW
Max Unit
--
-1
±100
V
uA
nA
-1.2 V
60 mR
90 mR
100 mR
-- S
-- pF
-- pF
-- pF
25 ns
70 ns
-1.2 V
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AFSEMI SSC8013GSB
Typical Performance Characteristics
20
VGS=-4.5V
VGS=-3V
15
VGS=-2.5V
VGS=-2V
10
5 VGS=-1.5V
0
0123
FigVuDSr,eD1r.aOinu-StpouutrcCehVaoraltcatgeeri(sVt)ics
4
2000
1600
1200
Ciss Ave(pF)
800
400 Coss Ave(pF)
Crss Ave(pF)
0
01234567
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
8
1.0
0.8
0.6
0.4
0.2
0.0
-50
0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold vs. Temperature
SSC8013GSB
12
VDS=-5V
10
8
6 150oC
4 25oC
2 -55oC
0
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
80
70
60
50
40
30
20
10
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance vs. Temperature
10
1
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
VSD, Diode Forward Voltage (V)
Figure 6. Diode Forward Characteristics
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