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SSC8013GS6 Dataheets PDF



Part Number SSC8013GS6
Manufacturers AFSEMI
Logo AFSEMI
Description P-Channel Enhancement Mode MOSFET
Datasheet SSC8013GS6 DatasheetSSC8013GS6 Datasheet (PDF)

SSC8013GS6 P-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 38mR@-4V5 ID  Applications  Load Switch  Portable Devices  DCDC conversion -12V ±8V 47mR@-2V5 -3.8A 61mR@-1V8  Pin Configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other batter.

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