Mode MOSFET. SSC8164GS6 Datasheet

SSC8164GS6 MOSFET. Datasheet pdf. Equivalent

SSC8164GS6 Datasheet
Recommendation SSC8164GS6 Datasheet
Part SSC8164GS6
Description N-Channel Enhancement Mode MOSFET
Feature SSC8164GS6; SSC8164GS6 N-channel Small Switching MOSFET  Features  Applications VDS 60V VGS ±20V RDSon T.
Manufacture AFSEMI
Datasheet
Download SSC8164GS6 Datasheet




AFSEMI SSC8164GS6
SSC8164GS6
N-channel Small Switching MOSFET
Features
Applications
VDS
60V
VGS
±20V
RDSon TYP
1.1R@10V
1.5R@4V5
ID
400mA
ESD
500V
Load Switch
Portable Devices
DCDC Conversion
Pin Configuration
General Description
Top View
D
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
3
DMOS trench technology .This device particularly suits low
voltage applications, especially for battery powered circuits,
the tiny and thin outline saves PCB consumption.
12
Ordering Information
GS
Device
SSC8164GS6
Marking
8164
Package
SOT23
Qty per Reel
3000
Reel Size
7 Inch
SSC-V1.0
http://www.afsemi.com
1/6
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AFSEMI SSC8164GS6
SSC8164GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-source voltage
VDSS
60
Gate-source voltage
VGSS
±20
Drain current
- Continuous
- Pulse
Total power dissipation (Tc=25°C)
ID 0.4
IDM 0.8
PD 0.45
Channel temperature
TCH -55 ~ +150
Storage temperature
TSTG
-55 ~ +150
Unit
V
V
A
W
°C
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain Cut-off Current
Gate-Source Leakage Current
V(BR)DSS
IDSS
IGSS
VGS = 0V, ID =10uA
VDS = 60 V , VGS = 0V
VGS =±15 V , VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH )
VDS = VGS, ID = 250uA
ID = 500mA , VGS =10V
Drain-Source On-state Resistance
RDS(ON)
ID = 500mA , VGS = 4.5V
Body Diode Forward Voltage
ID = 500mA , VGS = 2.5V
VSD IS = 200 mA, VGS = 0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
CISS
COSS
CRSS
VDS = 25V , VGS = 0V
f= 1 MHz
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
TD ( ON )
TR
TD( OFF )
TF
VGS = 5V , ID = 10mA
VDS = 5V, RL = 500R,
RGS = 10R
Min
60
--
--
0.75
--
--
1.25
--
--
--
--
--
--
--
Typ Max Unit
-- -- V
-- 1 uA
-- ±10 uA
1 1.25
1.1 2.5
1.5 3.5
1.7 4
1.3
V
R
V
30 --
12 -- pF
9 --
12 --
10 --
ns
35 --
15 --
SSC-V1.0
http://www.afsemi.com
2/6
Analog Future



AFSEMI SSC8164GS6
Typical Performance Characteristics
SSC8164GS6
SSC-V1.0
http://www.afsemi.com
3/6
Analog Future







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