SSC8164GS6

SSC8164GS6 N-channel Small Switching MOSFET  Features  Applications VDS 60V VGS ±20V RDSon TYP 1.1R@10V 1.5R@4V5 ID 400mA ESD 500V  Load Switch  Portable Devices  DCDC Conversion  Pin Configuration  General Description Top View D This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and 3 DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. 12  Ordering Information GS Device SSC8164GS6 Marking 8164 Package SOT23 Qty per Reel 3000 Reel Size 7 Inch SSC-V1.0 http://www.afsemi.com 1/6 Analog Future SSC8164GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-source voltage VDSS 60 Gate-source voltage VGSS ±20 Drain current - Continuous - Pulse Total power dissipation (Tc=25°C) ID 0.4 IDM 0.8 PD 0.45 Channel temperatur...