SSC8120GS9
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
300mR@4V5
20V ±12V 440mR@2V5 0.75A 1.2K
800mR@1V8
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for...
