Mode MOSFET. SSC8120GS9 Datasheet

SSC8120GS9 MOSFET. Datasheet pdf. Equivalent

SSC8120GS9 Datasheet
Recommendation SSC8120GS9 Datasheet
Part SSC8120GS9
Description N-Channel Enhancement Mode MOSFET
Feature SSC8120GS9; SSC8120GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 300mR@4V5.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8120GS9
SSC8120GS9
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
300mR@4V5
20V ±12V 440mR@2V5 0.75A 1.2K
800mR@1V8
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital Transistor
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
Package Information
Package:SOT723
Unit:mm
Dim Min
Typ Max
A 0.430
-- 0.500
A1 0.000
-- 0.050
b 0.170
-- 0.270
b1 0.270
-- 0.370
c 0.080
-- 0.150
D 1.150
-- 1.250
E 1.150
-- 1.250
E1 0.750
-- 0.850
e 0.800TYP
θ 7°REF.
SSC-V1.0
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AFSEMI SSC8120GS9
SSC8120GS9
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Max
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
VGS
ID
IDM
PD
±12
0.75
0.5
2
0.15
0.1
Storage and Junction Temperature Range
TJ, TSTG
-55 to +150
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient a
t10S
Steady-State
RJA
--
--
Maximum Junction-to-Case
Steady-State
RJC
--
Max
632
833
670
Unit
V
V
A
A
A
W
W
°C
°C
Units
°C/W
°C/W
°C/W
Order information
Device
Package
Marking
SSC8120GS9
SOT723
SSC-V1.0
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AFSEMI SSC8120GS9
SSC8120GS9
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Turn-On Delay Time
Turn-Off Delay Time
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0 V, ID = 250μA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
ID = 600mA,VGS = 4.5V
ID = 500mA,VGS = 2.5V
ID = 350mA,VGS = 1.8V
SWITCHING CHARACTERISTICS
td(on)
VDD = -6V, RL = 6R, ΙD = −1Α,
td(off)
VGEN = -4.5V, RG = 6R
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
BODY DIODE CHARACTERISTICS
Diode Forward Voltage(1)
VSD VGS = 0 V, IS = 150mA
a: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b: Pulse width<380µs, Duty Cycle<2%
c: Maximum junction temperature TJ=150°C.
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±10
V
uA
uA
0.35 0.6 1
-- 300 450
-- 440 765
-- 800 1300
V
mR
-- 5 --
-- 26 --
ns
-- 110 --
-- 15 --
-- 12 --
pF
-- 0.7 1.3
V
SSC-V1.0
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