SSC8120GN1

SSC8120GN1 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 0.7A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications ➢ Load Switch ➢ Portable Devices ➢ DCDC Conversion  Pin configuration bottom View  Package Information SSC-1V0 DFN1006 1/5 http://www.afsemi.com  Order information Device SSC8120GN1 Package DFN1006 SSC8120GN1 Marking Shipping 10000/Tape&Reel  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current a [email protected] TA = 25°C Continuous Drain Current a [email protected] TA = 70°C ID Plused Drain Current b IDM Power Dissipation...