Mode MOSFET. SSC8120GN1 Datasheet

SSC8120GN1 MOSFET. Datasheet pdf. Equivalent

SSC8120GN1 Datasheet
Recommendation SSC8120GN1 Datasheet
Part SSC8120GN1
Description N-Channel Enhancement Mode MOSFET
Feature SSC8120GN1; SSC8120GN1 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 49.
Manufacture AFSEMI
Datasheet
Download SSC8120GN1 Datasheet




AFSEMI SSC8120GN1
SSC8120GN1
N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±12V
RDSon TYP
310mR@4V5
490mR@2V5
850mR@1V8
ID
0.7A
ESD
1.2K
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density
and DMOS trench technology .This device
particularly suits low voltage applications, especially
for battery powered circuits, the tiny and thin outline
saves PCB consumption.
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin configuration
bottom View
Package Information
SSC-1V0
DFN1006
1/5
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AFSEMI SSC8120GN1
Order information
Device
SSC8120GN1
Package
DFN1006
SSC8120GN1
Marking
Shipping
10000/Tape&Reel
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
ID
Plused Drain Current b
IDM
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
PD
Storage and Junction Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to- Ambient C
t10S
Steady-State
t10S
Steady-State
Symbol
RJA
RJA
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
GateBody Leakage
OFF CHARACTERISTICS
V(BR)DSS VGS = 0 V, ID = 250uA
IDSS VDS = 16 V, VGS = 0 V
IGSS VGS = ±12 V, VDS = 0 V
ON CHARACTERISTICS(2)
Gate Threshold Voltage
Static DrainSource On-Resistance
VGS(TH) VDS = VGS, ID = 50uA
RDS(ON) VGS = 4.5 V, ID = 0.6 A
SSC-1V0
Max
20
±12
0.7
0.5
2.8
0.9
0.5
-55 to +150
Unit
V
A
A
A
W
W
°C
Typ
83
115
201
280
Max
105
143
250
340
Units
°C/W
°C/W
°C/W
°C/W
Min Typ Max Unit
20 -- -- V
-- -- 1 uA
-- -- ±10 uA
0.35 0.6
1
V
-- 310 450 mR
2/5
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AFSEMI SSC8120GN1
SSC8120GN1
VGS = 2.5 V, ID = 0.5 A
-- 490
VGS = 1.8 V, ID = 0.35 A
-- 850
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
-- 100
-- 17
-- 11
SWITCHING CHARACTERISTICS
TurnOn Delay Time
TurnOn Rise Time
TurnOff Delay Tim
TurnOff Fall Time
TD(ON)
TR
TD(OFF)
VDD = 5 V, ID = 0.3A,
VGS =4.5 V,RGEN=6R
TF
-- --
-- --
-- --
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 0.11 A
Notes :
a: mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
b:Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
c: mounted on FR-4 minimum pad board, in a still air environment with T A =25°C.
--
0.7
765
1300
--
--
--
5
80
26
25
1.3
pF
nS
V
Typical Performance Characteristics
5
V = 3.5V,4.0V,4.5V
GS
4 V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
3
2
1
V = 1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
3.0
3.5
V = 3.0V
DS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5 1.0 1.5 2.0
V , Gate-Source Voltage(V)
GS
Figure 2. Transfer Characteristics
2.5
SSC-1V0
3/5
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