Mode MOSFET. SSC8LA0GS1 Datasheet

SSC8LA0GS1 MOSFET. Datasheet pdf. Equivalent

SSC8LA0GS1 Datasheet
Recommendation SSC8LA0GS1 Datasheet
Part SSC8LA0GS1
Description N-Channel Enhancement Mode MOSFET
Feature SSC8LA0GS1; SSC8LA0GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 100V VGS ±20V RDSon TYP 9.5mR@10.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8LA0GS1
SSC8LA0GS1
N-Channel Enhancement Mode MOSFET
Features
VDS
100V
VGS
±20V
RDSon TYP
9.5mR@10V
13.5mR@4V5
ID
14A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Industrial and Motor Drive applications
DC/DC conversion and AC/DC Converters
Pin Configuration
Top View
Package Information
⑧ ⑦ ⑥⑤
② ③④
SOP8
Unit:mm
SSC-1V0
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AFSEMI SSC8LA0GS1
SSC8LA0GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (Note 1)
ID
Plused Drain Current (Note 2)
IDM
Total Power Dissipation (Note 1)
PD
Operating and Storage Junction Temperature Range
TJ, TSTG
N-channel
100
±20
14
100
2.0
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Drain–Source On–State Resistance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250uA
VDS = VGS, ID =250uA
VGS = ± 12 V, VDS = 0 V
VDS = 100 V, VGS = 0 V
VGS = 10 V, ID = 11.5 A
VGS = 4.5 V, ID = 10 A
VGS = 0 V, IS = 6 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 30 V, RL = 30 R,
VGS = 10 V, VGEN=10 V
Min Typ Max
100 --
--
1.0 1.7 2.2
-- -- ±100
-- -- 1
-- 9.5 12
--
13.5
15
-- -- 1.5
-- 2400 --
-- 186 --
-- 15 --
-- 20 --
-- 30 --
Unit
V
V
nA
uA
mR
V
pF
ns
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DCcontinuoustest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-1V0
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AFSEMI SSC8LA0GS1
3. Typical Performance Characteristics
SSC8LA0GS1
SSC-1V0
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