SSC8030GN2

SSC8030GN2 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 8.5mR@10V 10.5mR@4V5 ID 10A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  PC/NB  DCDC conversion Pin configuration Top View  Package Information SSC-V1.0 http://www.afsemi.com http://www.Spring-Power.com 1/4 Analog Future SSC8030GN2  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 30 ±20 10 41 2 -55 to +150 Unit V V A A W °C  Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Drain–Source Breakdown Voltage Gate T...