Mode MOSFET. SSC8132GN6 Datasheet

SSC8132GN6 MOSFET. Datasheet pdf. Equivalent

SSC8132GN6 Datasheet
Recommendation SSC8132GN6 Datasheet
Part SSC8132GN6
Description N-Channel Enhancement Mode MOSFET
Feature SSC8132GN6; SSC8132GN6 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon .
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Datasheet
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AFSEMI SSC8132GN6
SSC8132GN6
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS
30V
VGS
±20V
RDSon TYP
1.7mR@10V
2.5mR@4V5
ID
100A
Load Switch
Portable Devices
DCDC conversion
General Description
This device uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Pin configuration
Package Information
Package:DFN5x6
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8132GN6
SSC8132GN6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current(note1)
Continuous
Pulse
Drain Current TA = 25°C
Power Dissipation(note2)
TA = 25°C
Power Dissipation (note3)
TA = 25°C
TA = 70°C
Operating and Storage Junction Temperature Range
VDSS
VGSS
ID
IDM
IDSM
PD
PDSM
TJ, TSTG
30
±20
100
360
28
83
2.3
1.5
-55 to +150
V
V
A
A
W
W
°C
Note1. The maximum current rating is package limited.
Note2. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit
for cases where additional heatsinking is used.
Note3: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter(note2)
Symbol
Test Conditions
STATIC CHARACTERISTICS
Min Typ Max Unit
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Static Drain–Source On–Resistance
V(BR)DSS
VGS = 0 V, ID = 250uA
IDSS VDS = 30 V, VGS = 0 V
IGSS VGS = ± 20 V, VDS = 0 V
VGS(TH)
VDS = VGS, ID = 250uA
RDS(ON)
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 10 A
DYNAMIC CHARACTERISTICS
30
--
--
1
--
--
-- -- V
-- 1 uA
--
±100
nA
1.5 3
V
1.7 2.2
mR
2.5 4
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=15V, ID=8.5A,
VGS=10V
54
29
122
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 15 V, VGS = 0 V,
F = 1MHz
-- 6420
-- 1045
-- 720
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Tim
Turn–Off Fall Time
TD(ON)
TR
TD(OFF)
TF
-- --
VGEN=10V, VDD=15V,
-- --
RL=15,
RGEN=3, ID=1A
-- --
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Max. Diode Forward Current
IS
-- --
Diode Forward Voltage
VSD
VGS = 0 V, IS = 1 A
-- --
--
--
--
17
18
67
25
4.3
1.0
nC
pF
nS
A
V
SSC-V1.0
http://www.afsemi.com
2/5
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AFSEMI SSC8132GN6
Typical Performance Characteristics
SSC8132GN6
SSC-V1.0
http://www.afsemi.com
3/5
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