SSC8220GT8

SSC8220GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 3.5mR@10V 4.5mR@4V5 6.0mR@3V3 ID 70A  General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Applications  Desktop Computer  Notebook  Pin Configuration Top View  Package Information TO-252 SSC-V1.0 Units:mm http://www.afsemi.com 1/5 Analog Future SSC8220GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range VDSS VGSS ID PD TJ, TSTG Ratings 20 ±12 70 200 2.5 -55 to +150 Unit V V A W °C  Electrical Characteristics @ TA = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V,...