SSC8042GS6
N-Channel Enhancement Mode MOSFET
Features
VDS 40V
VGS ±12V
RDSon TYP 30mR@10V 35mR@4V5
ID 6A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
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