SSC8222GN2

SSC8222GN2 N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 5.6mR@4V5 7.5mR@2V5 13mR@2V5 ID 10A  Applications  Li-ion battery protection ;  Load swich  Pin configuration Bottom View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8222GN2 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. DFN2X2-6L  Package Information SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8222GN2  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Currentnote1 TA=25℃ TA=100℃ ID Total Power Dissipation Operating and Storage Temperature Range PD Topr Storage T...