SSC8120GS8
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
310mR@4V5
20V ±12V 490mR@2V5...
SSC8120GS8
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
310mR@4V5
20V ±12V 490mR@2V5 0.8A 1.2K
850mR@1V8
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.
Package Information
Applications
Replace Digital
Transistor Battery Operated Systems Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers Pin Configuration
Top View
DD 33
12 GS
1 S
Package:SOT523
Unit:mm
Dim Min
Typ Max
A
0.15
0.22
0.30
B
0.75
0.80
0.85
C
1.45
1.60
1.75
D
--
0.50
--
G
0.90
1.00
1.10
H
1.50
1.60
1.70
J
0.00
0.05
0.10
K
0.60
0.75
0.80
L
0.10
0.22
0.30
M
0.10
0.12
0.20
N
0.45
0.50
0.65
2 G
SSC-V1.0
http://www.afsemi.com
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