Mode MOSFET. SSC8120GS8 Datasheet

SSC8120GS8 MOSFET. Datasheet pdf. Equivalent

SSC8120GS8 Datasheet
Recommendation SSC8120GS8 Datasheet
Part SSC8120GS8
Description N-Channel Enhancement Mode MOSFET
Feature SSC8120GS8; SSC8120GS8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID ESD 310mR@4V5.
Manufacture AFSEMI
Datasheet
Download SSC8120GS8 Datasheet




AFSEMI SSC8120GS8
SSC8120GS8
N-Channel Enhancement Mode MOSFET
Features
VDS
VGS
RDSon TYP
ID ESD
310mR@4V5
20V ±12V 490mR@2V5 0.8A 1.2K
850mR@1V8
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Package Information
Applications
Replace Digital Transistor
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
DD
33
12
GS
1
S
Package:SOT523
Unit:mm
Dim Min
Typ Max
A
0.15
0.22
0.30
B
0.75
0.80
0.85
C
1.45
1.60
1.75
D
--
0.50
--
G
0.90
1.00
1.10
H
1.50
1.60
1.70
J
0.00
0.05
0.10
K
0.60
0.75
0.80
L
0.10
0.22
0.30
M
0.10
0.12
0.20
N
0.45
0.50
0.65
2
G
SSC-V1.0
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AFSEMI SSC8120GS8
SSC8120GS8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Max
Drain-Source Voltage
VDS 20
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
VGS
ID
IDM
PD
±12
0.8
0.55
3
0.25
0.175
Storage and Junction Temperature Range
Thermal Characteristics
TJ, TSTG
-55 to +150
Parameter
Symbol
Typ
Maximum Junction-to-Ambient a
t10S
Steady-State
RJA
--
--
Maximum Junction-to-Case
Steady-State
RJC
--
Max
417
500
300
Unit
V
A
A
A
W
W
°C
Units
°C/W
°C/W
°C/W
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0 V, ID = 250μA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Turn-On Delay Time
Turn-Off Delay Time
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
ID = 600mA,VGS = 4.5V
ID = 500mA,VGS = 2.5V
ID = 350mA,VGS = 1.8V
SWITCHING CHARACTERISTICS
td(on)
td(off)
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
BODY DIODE CHARACTERISTICS
Diode Forward Voltage(1)
VSD VGS = 0 V, IS = 150mA
a: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b: Pulse width<380µs, Duty Cycle<2%
c: Maximum junction temperature TJ=150°C.
SSC-V1.0
http://www.afsemi.com
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±10
V
uA
uA
0.35 0.6 1
-- 310 450
-- 490 765
-- 850 1300
V
mR
-- 5 --
-- 26 --
ns
-- 110 --
-- 15 --
-- 12 --
pF
-- 0.7 1.3
V
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AFSEMI SSC8120GS8
SSC8120GS8
Typical Performance Characteristics
5
V = 3.5V,4.0V,4.5V
GS
4 V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
3
2
1
V = 1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
1.0
V = 1.8V
GS
0.8
3.0
3.5
V = 3.0V
DS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5
V , Gate-Source Voltage(V)
GS
Figure 2. Transfer Characteristics
200
150
0.6
0.4
V = 2.5V
GS
0.2
V = 4.5V
GS
0.0
012345
I , Drain Current (A)
D
Figure 3. On Resistance vs. Drain Current
300
100 C i s s
50 C o s s
Crss
0
0 5 10 15 20
V , Drain-Source Voltage (V)
DS
Figure 4. Capacitance
1
250
VGS= 1.8V, ID= 0.15A
200 0.1
150
VGS= 4.5V, ID= 0.35A
100 0.01
50
0
-25 0
25 50 75 100 125
Tj Junction Temperature (oC)
Figure 5 . On resistance vs. Temperature
1E-3
0.2 0.4 0.6 0.8 1.0
V , Drain-Source Voltage (V)
SD
Figure 6. Diode Forward Characteristics
SSC-V1.0
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