Mode MOSFET. SSC8228GQ4 Datasheet

SSC8228GQ4 MOSFET. Datasheet pdf. Equivalent

SSC8228GQ4 Datasheet
Recommendation SSC8228GQ4 Datasheet
Part SSC8228GQ4
Description N-Channel Enhancement Mode MOSFET
Feature SSC8228GQ4; SSC8228GQ4 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±12V RDSon TYP 5.5mR@4V5.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8228GQ4
SSC8228GQ4
N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±12V
RDSon TYP
5.5mR@4V5
7mR@2V5
ID
40A
General Description
The SSC8228GQ4 combines advanced trench
MOSFET technology with a low resistance package to
provide extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin configuration
Top View
Package Information
SSC-1V0
Package: DFN3X3
Symbol
A
A1
A3
D
E
D1
E1
k
b
e
L
Dimenions Millimeters
Min. Max.
0.700/0.800 0.800/0.900
0.000
0.050
0.203REF
2.924
3.076
2.924
3.076
2.350
2.550
1.700
1.900
0.450
0.550
0.270
0.370
0.650TYP
0.324
0.476
1/5
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AFSEMI SSC8228GQ4
SSC8228GQ4
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipationnote2
Continuousnote1
Pulsed
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
20
±12
40
160
3
-55 to +150
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
GateBody Leakage
OFF CHARACTERISTICS
V(BR)DSS VGS = 0 V, ID = 250uA
IDSS VDS = 16 V, VGS = 0 V
IGSS VGS = ±12 V, VDS = 0 V
ON CHARACTERISTICS(2)
20 --
-- --
-- --
Gate Threshold Voltage
Static DrainSource On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 50uA
RDS(ON)
VGS = 4.5 V, ID = 10 A
VGS = 2.5 V, ID = 9 A
GFS VDS = 5 V, ID = 3.6 A
DYNAMIC CHARACTERISTICS
0.5 0.7
-- 5.5
-- 7
-- 105
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
-- 3860
-- 740
-- 580
SWITCHING CHARACTERISTICS
TurnOn Delay Time
TurnOn Rise Time
TurnOff Delay Tim
TurnOff Fall Time
TD(ON)
TR
TD(OFF)
VDD = 5 V, ID = 3.6A,
VGS =4.5 V,RGEN=6R
TF
-- 7
-- 8
-- 70
-- 18
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
Notes :
1. The maximum current rating is package limited.
2. Surface Mounted on FR4 Board, t < 10 sec
-- 0.7
Unit
V
V
A
W
°C
Max Unit
--
1
±100
V
uA
nA
1.0 V
7
mR
9
-- S
--
-- pF
--
--
--
nS
--
--
1.3 V
SSC-1V0
2/5
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AFSEMI SSC8228GQ4
2. Typical Performance Characteristics
SSC8228GQ4
SSC-1V0
3/5
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