Mode MOSFET. SSC8162GT3 Datasheet

SSC8162GT3 MOSFET. Datasheet pdf. Equivalent

SSC8162GT3 Datasheet
Recommendation SSC8162GT3 Datasheet
Part SSC8162GT3
Description N-Channel Enhancement Mode MOSFET
Feature SSC8162GT3; SSC8162GT3 N-Channel Enhancement Mode MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 9mR@10V 1.
Manufacture AFSEMI
Datasheet
Download SSC8162GT3 Datasheet




AFSEMI SSC8162GT3
SSC8162GT3
N-Channel Enhancement Mode MOSFET
Features
VDS
60V
VGS
±20V
RDSon TYP
9mR@10V
13mR@4V5
ID
60A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Package Information
SSC-V1.0
http://www.afsemi.com
1/5
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AFSEMI SSC8162GT3
SSC8162GT3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current (Note 1)
ID
Plused Drain Current (Note 2)
IDM
Total Power Dissipation (Note 1)
PD
Operating and Storage Junction Temperature Range
TJ, TSTG
N-channel
60
±20
60
240
32
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Drain–Source On–State Resistance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250uA
VDS = VGS, ID =250uA
VGS = ± 20 V, VDS = 0 V
VDS = 48 V, VGS = 0 V
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 10 A
VGS = 0 V, IS = 30A
VDS = 25 V, VGS = 0 V,
f = 200kMHz
VDS = 30 V, RL = 30 R,
VGS = 10 V, VGEN=10 V
Min Typ Max
60 --
--
2 2.75 4
-- -- ±100
-- -- 1
-- 9 12
-- 13 18
-- -- 1.3
-- 2960 --
-- 236 --
-- 160 --
-- 20 --
-- 69 --
Unit
V
V
nA
uA
mR
V
pF
ns
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DCcontinuoustest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-V1.0
http://www.afsemi.com
2/5
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AFSEMI SSC8162GT3
3. Typical Performance Characteristics
SSC8162GT3
SSC-V1.0
http://www.afsemi.com
3/5
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