Mode MOSFET. SSC8160GS6 Datasheet

SSC8160GS6 MOSFET. Datasheet pdf. Equivalent

SSC8160GS6 Datasheet
Recommendation SSC8160GS6 Datasheet
Part SSC8160GS6
Description N-Channel Enhancement Mode MOSFET
Feature SSC8160GS6; SSC8160GS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@.
Manufacture AFSEMI
Datasheet
Download SSC8160GS6 Datasheet




AFSEMI SSC8160GS6
SSC8160GS6
N-channel Small Switching MOSFET
Features
VDS
60V
VGS
±20V
RDSon TYP
2R@10V
3R@4V5
ID
300mA
ESD
3kV
General Description
This device is an N-Channel enhancement mode MOSFET,
with low on-resistance, fast switching speed and low
threshold voltage (2V), it is ideal for portable equipment.
Applications
Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers,
Display, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays
Pin configuration
Top View
D
3
Package Information
12
GS
SOT23
Unit:mm
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8160GS6
SSC8160GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
- Continuous
- Pulse
Total power dissipation (Tc=25°C)
ID
IDM
PD*1
300
800
350
mA
mW
Channel temperature
TCH -55 ~ +150
°C
Storage temperature
TSTG
-55 ~ +150
°C
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID =10uA
Drain Cut-off Current
IDSS VDS = 60 V , VGS = 0V
Gate-Source Leakage Current
IGSS VGS =±20 V , VDS = 0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH )
VDS = VGS, ID = 250uA
Drain-Source On-state Resistance
RDS(ON)
ID = 500mA , VGS =10V
ID = 50mA , VGS = 4.5V
Forward Transconductance
GFS VDS = 10V, ID = 200mA
Body Diode Forward Voltage
VSD IS = 200 mA, VGS = 0 V
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Feedback Capacitance
CISS
COSS
CRSS
VDS = 25V , VGS = 0V
F= 1 MHz
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
TD ( ON )
TR
TD( OFF )
TF
VGS = 5V , ID = 10mA
VDD = 5V, RL = 500R,
RGS = 10R
Note 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
60 -- -- V
-- -- 1 uA
-- -- ±10 uA
1 -- 2.5 V
-- 2 6.6
R
-- 3 8
80 --
-- ms
0.7 1.3
V
-- 32 --
-- 7 -- pF
-- 3 --
-- 15 --
-- 35 --
ns
-- 35 --
-- 35 --
SSC-V1.0
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AFSEMI SSC8160GS6
Typical Performance Characteristics
1.6
1.4 VGS=10(V)
1.2
1.0 VGS=8(V)
0.8 VGS=5(V)
0.6
0.4 VGS=4(V)
0.2 VGS=3(V)
0.0
0 1 2 3 4 5 6 7 8 9 10
VDS,Drain-Source Voltage(V)
Figure1. Output Characteristics
50
40
Ciss Ave(pF)
30
20
10
0
0
3.0
Coss Ave(pF)
Crss Ave(pF)
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
30
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25 0 25 50 75 100 125 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold Vs. Temperature
SSC8160GS6
1
0.1
125oC
0.01 85oC
25oC
-55oC
1E-3
0
1 2 3 4 5 6 7 8 9 10
VGS, Gate-to-Source Voltage(V)
Figure 2. Transfer Characteristics
6
5
4 VGS=4.5V
3
VGS=10V
2
1
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance Vs. Temperature
1
25oC
0.1
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Body Diode Forward Voltage (V)
Figure 6.Body Diode Forward Voltage
SSC-V1.0
http://www.afsemi.com
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