SSC8160GS6

SSC8160GS6 N-channel Small Switching MOSFET  Features  VDS 60V VGS ±20V RDSon TYP 2R@10V 3R@4V5 ID 300mA ESD 3kV   General Description This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low threshold voltage (2V), it is ideal for portable equipment. Applications  Direct Logic-Level Interface: TTL/CMOS  Drivers: Relays, Solenoids, Lamps, Hammers,  Display, Memories, Transistors, etc.  Battery Operated Systems  Solid-State Relays Pin configuration Top View D 3  Package Information 12 GS ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8160GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 V Drain current - Continuous - Pulse Total power dissipation (Tc=25°C) ID IDM PD*1 300 800 350 mA mW Channel temperature TCH -55 ~ +150 °C ...