SSC8160GS6
N-channel Small Switching MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 2R@10V 3R@4V5
ID 300mA
ESD 3...
SSC8160GS6
N-channel Small Switching MOSFET
Features
VDS 60V
VGS ±20V
RDSon TYP 2R@10V 3R@4V5
ID 300mA
ESD 3kV
General Description This device is an N-Channel enhancement mode MOSFET, with low on-resistance, fast switching speed and low
threshold voltage (2V), it is ideal for portable equipment.
Applications
Direct Logic-Level Interface: TTL/CMOS Drivers: Relays, Solenoids, Lamps, Hammers, Display, Memories,
Transistors, etc. Battery Operated Systems
Solid-State Relays Pin configuration
Top View
D
3
Package Information
12 GS
③
①②
SOT23 Unit:mm
SSC-V1.0
http://www.afsemi.com
1/4
Analog Future
SSC8160GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
V
Drain current
- Continuous - Pulse
Total power dissipation (Tc=25°C)
ID IDM PD*1
300 800 350
mA mW
Channel temperature
TCH -55 ~ +150
°C
...