Mode MOSFET. SSC8138GT8 Datasheet

SSC8138GT8 MOSFET. Datasheet pdf. Equivalent

SSC8138GT8 Datasheet
Recommendation SSC8138GT8 Datasheet
Part SSC8138GT8
Description N-Channel Enhancement Mode MOSFET
Feature SSC8138GT8; SSC8138GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8138GT8
SSC8138GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications
Desktop Computer
Notebook
4.8mR@10V
25V ±20V
55A
6mR@4V5
Pin Configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Package Information
Units:mm
SSC-V1.0
http://www.afsemi.com
1/6
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AFSEMI SSC8138GT8
SSC8138GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating and Storage Junction Temperature Range
Pulsed Drain Current (Note 2)
Mounted on PCB of Minimum Footprint Continuous Drain Current (Note 1)
Total Power Dissipation (Note 1)
Mounted on PCB of 1in2 Pad Area
Pulsed Drain Current (Note 2)
Continuous Drain Current (25°C)
Total Power Dissipation (25°C)
Pulsed Drain Current (Note 2)
Mounted on Large Heat Sink
Continuous Drain Current (25°C)
Total Power Dissipation (25°C)
Electrical Characteristics @ TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
TJ, TSTG
IDM
ID
PD
IDM
ID
PD
IDM
ID
PD
Ratings
25
±20
-55 to +150
150
17
1.5
150
20
2.5
150
60 (Note 3)
50
Unit
V
V
°C
A
A
W
A
A
W
A
A
W
Parameter
Symbol Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 uA
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID =250 uA
Gate–Body Leakage Current
IGSS VGS = ± 20 V, VDS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
Drain–Source On–State Resistance RDS(ON)
VGS = 10 V, ID = 30A
VGS = 4.5 V, ID = 30A
Forward Transconductance
GFS VDS = 5 V, ID = 5 A
Diode Forward Voltage
VSD VGS = 0 V, IS = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Turn–On Delay Time
Turn–Off Delay Tim
Notes:
TD(ON)
TD(OFF)
VDS = 15 V, RL = 15R,
IDS = 1A,
VGS = 10V, RGEN=6R
25 27
-- V
1.3 1.8 3.0 V
--
--
±100
nA
-- -- 1 uA
-- 4.8 6.0
mR
-- 6.0 9.0
-- 7.3 -- S
--
0.86
1.3
V
-- 2650 --
-- 910 -- pF
-- 774 --
-- 18
-- 61
nS
1. DUT is mounted on a 1in2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on the
DC<10stest conditions.
2. Repetitive rating, pulse width limited by junction temperature. 300us Pulse Drain Current Tested
SSC-V1.0
http://www.afsemi.com
2/6
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AFSEMI SSC8138GT8
3. Current limited by bond wire.
SSC8138GT8
SSC-V1.0
http://www.afsemi.com
3/6
Analog Future







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