SSC8138GT4

SSC8138GT4 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 4.8mR@10V 25V ±20V 55A 6mR@4V5  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. S D G  Package Information Unit: mm TO220 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8138GT4  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Power Dissipation (Note 1) TC=25°C TC=25°C Operating and Storage Junction Temperature Range TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise noted Limit 25 ±20 127 500 300 150 -55 to 150 Unit V V A A W W °C Parameter Symbol Test Conditions...