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Mode MOSFET. SSC8138GT4 Datasheet

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Mode MOSFET. SSC8138GT4 Datasheet
















SSC8138GT4 MOSFET. Datasheet pdf. Equivalent













Part

SSC8138GT4

Description

N-Channel Enhancement Mode MOSFET



Feature


SSC8138GT4 N-Channel Enhancement Mode M OSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Comp uter  Notebook 4.8mR@10V 25V ±20V 55A 6mR@4V5  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable f or use as a load switch or in P.
Manufacture

AFSEMI

Datasheet
Download SSC8138GT4 Datasheet


AFSEMI SSC8138GT4

SSC8138GT4; WM applications. S D G  Package Inf ormation Unit: mm TO220 SSC-V1.0 htt p://www.afsemi.com 1/5 Analog Future SSC8138GT4  Absolute Maximum Rating s @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drai n Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Power D issipation (Note 1) TC=.


AFSEMI SSC8138GT4

25°C TC=25°C Operating and Storage Ju nction Temperature Range TJ, TSTG  Electrical Characteristics @ TA = 25° C unless otherwise noted Limit 25 ±20 127 500 300 150 -55 to 150 Unit V V A A W W °C Parameter Symbol Test Cond itions .


AFSEMI SSC8138GT4

.





Part

SSC8138GT4

Description

N-Channel Enhancement Mode MOSFET



Feature


SSC8138GT4 N-Channel Enhancement Mode M OSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Comp uter  Notebook 4.8mR@10V 25V ±20V 55A 6mR@4V5  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable f or use as a load switch or in P.
Manufacture

AFSEMI

Datasheet
Download SSC8138GT4 Datasheet




 SSC8138GT4
SSC8138GT4
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
Applications
Desktop Computer
Notebook
4.8mR@10V
25V ±20V
55A
6mR@4V5
Pin configuration
General Description
Top View
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
S
D
G
Package Information
Unit: mm
TO220
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future




 SSC8138GT4
SSC8138GT4
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current (Note 1)
Continuous TA=25°C
Pulsed (Note 2)
ID
IDM
Total Power Dissipation (Note 1)
TC=25°C
TC=25°C
Operating and Storage Junction Temperature Range
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise noted
Limit
25
±20
127
500
300
150
-55 to 150
Unit
V
V
A
A
W
W
°C
Parameter
Symbol Test Conditions
Min Typ Max Unit
Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 uA
Gate Threshold Voltage
VGS(TH) VDS = VGS, ID =250 uA
Gate–Body Leakage Current
IGSS VGS = ± 20 V, VDS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
Drain–Source On–State Resistance RDS(ON)
VGS = 10 V, ID = 30A
VGS = 4.5 V, ID = 30A
Forward Transconductance
GFS VDS = 5 V, ID = 5 A
Diode Forward Voltage
VSD VGS = 0 V, IS = 10 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Turn–On Delay Time
Turn–Off Delay Tim
Notes:
TD(ON)
TD(OFF)
VDS = 15 V, RL = 15R,
IDS = 1A,
VGS = 10V, RGEN=6R
25 --
-- V
1.3 1.8 3.0 V
--
--
±100
nA
-- -- 1 uA
-- 4.8 6.0
mR
-- 6.0 9.0
-- 7.3 -- S
--
0.86
1.3
V
-- 2650 --
-- 910 -- pF
-- 774 --
-- 18
-- 61
nS
1. DUT is mounted on a 1in2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on the
DC<10stest conditions.
2. Repetitive rating, pulse width limited by junction temperature. 300us Pulse Drain Current Tested.
3. Current limited by bond wire.
SSC-V1.0
http://www.afsemi.com
2/5
Analog Future




 SSC8138GT4
Typical Performance Characteristics
100
VGS=10V
80
V =6.0V
GS
60 VGS=3.0V
40
VGS=2.5V
20
0
0.0 0.4 0.8 1.2 1.6 2.0
VDS,Drain-Source Voltage (V)
Fig1.Drain-Source Voltage vs. Drain Current
SSC8138GT4
5
4
3
2 125oC
1
85oC
25oC
-55oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-Source Voltage(V)
Fig2. Transfer Characteristics
ID=40A
12
8
4
8
VGS=4.5V
4 VGS=10V
0
0 2 4 6 8 10
VGS,Gate-Source Voltage (V)
Fig3.Gate-Source Voltage vs. On-Resistance
2400
CISS
1600
COSS
800
Crss
0
0 5 10 15 20 25
Drain-Source Voltage (V)
Fig5.Drain-Source Voltage vs. Capacitance
0
0 20 40 60 80 100
ID, Drain Current(A)
Fig4. Drain Current vs. On-Resistance
6.0
5.5
V =10V,I =20A
GS D
5.0
4.5
4.0
-25
0 25
Tj-Junction
Te5m0 per7a5ture1(0o0C)
125
150
Fig6.Junction Temperature vs. On-Resistance
SSC-V1.0
http://www.afsemi.com
3/5
Analog Future




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