DatasheetsPDF.com

SSC8128GT8 Dataheets PDF



Part Number SSC8128GT8
Manufacturers AFSEMI
Logo AFSEMI
Description N-Channel Enhancement Mode MOSFET
Datasheet SSC8128GT8 DatasheetSSC8128GT8 Datasheet (PDF)

SSC8128GT8 N-Channel Enhancement Mode MOSFET  Features  VDS 25V VGS ±20V RDSon TYP 4.8mR@10V 6mR@4V5 ID 80A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Desktop Computer  Notebook Pin Configuration Top View  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8128GT8  Absolute Maximum Ra.

  SSC8128GT8   SSC8128GT8


Document
SSC8128GT8 N-Channel Enhancement Mode MOSFET  Features  VDS 25V VGS ±20V RDSon TYP 4.8mR@10V 6mR@4V5 ID 80A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Desktop Computer  Notebook Pin Configuration Top View  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8128GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range VGSS ID PD TJ, TSTG Ratings 25 ±20 80 200 2.5 -55 to +150 Unit V V A W °C  Electrical Characteristics @ TA = 25°C unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Drain–Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 uA G.


SSC8138GT4 SSC8128GT8 SSC80K2GT8


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)