SSC80K2GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS 200V ±20V
RDSon TYP 510mR@10V 520mR@4V5
ID 2A
General Description
This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices ...
