Mode MOSFET. SSC80A2GT8 Datasheet

SSC80A2GT8 MOSFET. Datasheet pdf. Equivalent

SSC80A2GT8 Datasheet
Recommendation SSC80A2GT8 Datasheet
Part SSC80A2GT8
Description N-Channel Enhancement Mode MOSFET
Feature SSC80A2GT8; SSC80A2GT8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 80mR@10V .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC80A2GT8
SSC80A2GT8
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
100V ±20V
RDSon TYP
80mR@10V
135mR@4V5
ID
6A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Package Information
Units:mm
SSC-V1.0
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AFSEMI SSC80A2GT8
SSC80A2GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Plused Drain Current (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
VDSS
VGSS
ID
IDM
PD
TJ, TSTG
N-channel
100
±20
6
30
2.5
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Drain–Source On–State Resistance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250uA
VDS = VGS, ID =250uA
VGS = ± 20 V, VDS = 0 V
VDS = 80 V, VGS = 0 V
VGS = 10 V, ID = 6 A
VGS = 4.5 V, ID = 3 A
VGS = 0 V, IS = 6 A
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
VDS = 30 V, RL = 30 R,
VGS = 10 V, VGEN=10 V
Min Typ Max
100 --
--
1.5 2 2.5
-- -- ±10
-- -- 1
-- 80 100
-- 135 180
-- -- 1.5
-- 1000 --
-- 95 --
-- 52 --
-- 15 --
-- 30 --
Unit
V
V
uA
uA
mR
V
pF
ns
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DCcontinuoustest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
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AFSEMI SSC80A2GT8
3. Typical Performance Characteristics
20
V =10.0V
GS
16
12
VGS=7.0V
VGS=5.5V
8 VGS=4.5V
4
VGS=3.5V
0
012345
V , Drain-Source Voltage (V)
DS
Fig1. Output Characteristics
200
VGS=10V
160
120
80
40
0
-50 -25 0 25 50 75 100 125 150 175
ID, Drain Current (A)
Fig3. On Resistance vs. Temperature
SSC80A2GT8
30
25
20
15
125oC
10 25oC
5 -55oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
VGS, Gate-to-source Voltage(V)
Fig2. Transfer Characteristics
1500
1200
900
Ciss
600
300 Crss
Coss
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Fig4. Capacitance
10
150oC
1
25oC
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VDS, Drain-Source Voltage (V)
Fig5. Diode Forward Characteristics
200
180
160
140
120
100 ID=5A
80
60
1 2 3 4 5 6 7 8 9 10
VGS, Gate-to-source Voltage(V)
Fig6. Threshold Characteristics
SSC-V1.0
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