SSC80A2GT8

SSC80A2GT8 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 100V ±20V RDSon TYP 80mR@10V 135mR@4V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Applications  Load Switch  Portable Devices  DCDC conversion Pin Configuration Top View  Package Information Units:mm SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC80A2GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 100 ±20 6 30 2.5 -55 to +150 Unit V V A A W °C  Electrical Characteristics @ TA = 25°C unless otherwise specified Parameter Drain–Source Breakdown Voltage ...