Mode MOSFET. SSC8066GS6 Datasheet

SSC8066GS6 MOSFET. Datasheet pdf. Equivalent

SSC8066GS6 Datasheet
Recommendation SSC8066GS6 Datasheet
Part SSC8066GS6
Description N-Channel Enhancement Mode MOSFET
Feature SSC8066GS6; SSC8066GS6 N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 45mR@10V 80m.
Manufacture AFSEMI
Datasheet
Download SSC8066GS6 Datasheet




AFSEMI SSC8066GS6
SSC8066GS6
N-Channel Enhancement Mode MOSFET
Features
VDS
60V
VGS
±20V
RDSon TYP
45mR@10V
80mR@4V5
ID
3A
Applications
Load Switch
Portable Devices
DCDC Conversion
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
①②
SSC-V1.0
SOT23
Units:mm
http://www.afsemi.com
1/4
Analog Future



AFSEMI SSC8066GS6
SSC8066GS6
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
60
±20
3
12
600
-55 to +150
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V(BR)DSS VGS = 0 V, ID = 250uA
IDSS VDS = 48 V, VGS = 0 V
IGSS VGS = ±20 V, VDS = 0 V
ON CHARACTERISTICS(2)
60 --
-- --
-- --
Gate Threshold Voltage
Static Drain–Source On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 250uA
RDS(ON)
VGS = 10 V, ID =3 A
VGS = 4.5 V, ID = 2.4 A
GFS VDS = 5 V, ID = 2.4 A
DYNAMIC CHARACTERISTICS
1 1.5
-- 45
-- 80
25
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
-- 592
-- 84
-- 53
Turn–On Delay Time
TD(ON)
-- --
Turn–On Rise Time
Turn–Off Delay Tim
TR
TD(OFF)
VDD = 5 V, ID = 2.4A,
VGS =4.5 V,RGEN=6R
-- --
-- --
Turn–Off Fall Time
TF
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
0.6 0.8
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2.
Unit
V
V
A
mW
°C
Max Unit
--
1
±100
V
uA
nA
3V
72
mR
95
14 S
--
-- pF
--
15
80
nS
60
25
1.15 V
SSC-V1.0
http://www.afsemi.com
2/4
Analog Future



AFSEMI SSC8066GS6
SSC8066GS6
Typical Performance Characteristics
30
V =10.0V
GS
25
20
V =8V
GS
15
VGS=4.5V
10
5 V =3.0V
GS
0
012345
VDS, Drain-Source Voltage (V)
Fig1. Output Characteristics
6
5
4
3
125oC
2
1
85oC
25oC
-55oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS, Gate-to-source Voltage(V)
Fig2. Transfer Characteristics
1200
1000
800
600
400
200
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage(V)
Fig3. Capacitance
200
180
160
140
120
100
80
60
40
20
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Fig4. On Resistance Vs. Temperature
2.5 10
2.0
1
1.5
1.0
ID=250uA
0.1
0.5
0.0
-25 0 25 50 75 100 125
Tj, Junction Temperature (oC)
Fig5. Gate Threshold vs. Temperature
0.01
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VDS, Drain-Source Voltage (V)
Fig6. Diode Forward Characteristics
3/4
SSC-V1.0
http://www.afsemi.com
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)