Mode MOSFET. SSC8036GT8 Datasheet

SSC8036GT8 MOSFET. Datasheet pdf. Equivalent

SSC8036GT8 Datasheet
Recommendation SSC8036GT8 Datasheet
Part SSC8036GT8
Description N-Channel Enhancement Mode MOSFET
Feature SSC8036GT8; SSC8036GT8 N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 24mR@10V .
Manufacture AFSEMI
Datasheet
Download SSC8036GT8 Datasheet





AFSEMI SSC8036GT8
SSC8036GT8
N-Channel Enhancement Mode MOSFET
Features
VDS
30V
VGS
±20V
RDSon TYP
24mR@10V
27mR@4V5
ID
10A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin Configuration
Top View
Package Information
SSC-V1.0
Units:mm
http://www.afsemi.com
1/5
Analog Future



AFSEMI SSC8036GT8
SSC8036GT8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Plused Drain Current (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
VDSS
VGSS
ID
IDM
PD
TJ, TSTG
N-channel
30
±20
10
50
2.5
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Drain–Source On–State Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250μA
VDS = VGS, ID =250μA
VGS = ± 20 V, VDS = 0 V
VDS = 24 V, VGS = 0 V
VGS = 10 V, ID = 5.8 A
VGS = 4.5 V, ID = 5 A
VDS = 5 V, ID = 5 A
VGS = 0 V, IS = 1 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDS = 15 V, RL = 2.3R,
VGS = 10V, RGEN=3R
Min Typ Max
Unit
30 34 --
V
1 1.5 3
V
--
--
±100
nA
-- -- 1 μA
-- 24 28
mR
-- 35 42
10 15 --
S
-- 0.71 1
V
-- 697 --
-- 259 --
pF
-- 308 --
-- -- 18
ns
-- -- 70
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DC<10stest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
SSC-V1.0
http://www.afsemi.com
2/5
Analog Future



AFSEMI SSC8036GT8
3. Typical Performance Characteristics
12
V =6.0V
V =10.0V GS
GS V =4.0V
GS
9
V =3.5V
GS
6
VGS=3.0V
3
VGS=2.5V
0
012345
VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
50
40
30 VGS=4.5V
20 VGS=10V
10
0
0 2 4 6 8 10
ID, Drain Current (A)
Figure 3. On Resistance vs. Drain Current
SSC8036GT8
6
5
4
3
125oC
2
1
85oC
25oC
-55oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0
VGS, Gate-to-source Voltage(V)
Figure 2. Transfer Characteristics
700
600
500
400
300
200
100
0
0 5 10 15 20
VDSF,iDgruarine-4to.-CSoaupracceiVtaonltcagee (V)
2.5
2.0
1.5
1.0 I =250uA
D
0.5
0.0
-25 0 25 50 75 100 125
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold vs. Temperature
45
40
35
VGS=4.5V
I =5A
D
30
25
20
V =10V
GS
I =5.8A
D
15
10
-25 0 25 50 75 100 125
Tj, Junction Temperature (oC)
Figure 6. On Resistance vs. Temperature
SSC-V1.0
http://www.afsemi.com
3/5
Analog Future





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)