Mode MOSFET. SSC8036GS6B Datasheet

SSC8036GS6B MOSFET. Datasheet pdf. Equivalent

SSC8036GS6B Datasheet
Recommendation SSC8036GS6B Datasheet
Part SSC8036GS6B
Description N-Channel Enhancement Mode MOSFET
Feature SSC8036GS6B; SSC8036GS6B N-Channel Enhancement Mode MOSFET  Features  VDS 30V VGS ±20V RDSon TYP 19mR@10V.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8036GS6B
SSC8036GS6B
N-Channel Enhancement Mode MOSFET
Features
VDS
30V
VGS
±20V
RDSon TYP
19mR@10V
23mR@4V5
ID
5A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
Top View
D
3
Package Information
12
GS
①②
SOT23
Units:mm
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8036GS6B
Order information
Device
Package
SSC8036GS6B
SOT23
SSC8036GS6B
Marking
Shipping
3000/Tape&Reel
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
Storage and Junction Temperature
VGSS
ID
IDM
PD
TJ TSTG
Ratings
30
±20
5
4
35.5
0.55
0.35
-55~150
Unit
V
V
A
A
A
W
W
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a
Maximum Junction-to-Case
t10S
Steady-State
Steady-State
Symbol
RJA
RJC
Typ
71
92
67
Max
95
116
87
Units
°C/W
°C/W
°C/W
SSC-V1.0
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AFSEMI SSC8036GS6B
SSC8036GS6B
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
DrainSource Breakdown Voltage
Gate Threshold Voltage
GateBody Leakage Current
Zero Gate Voltage Drain Current
DrainSource OnState Resistance
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
TurnOff Delay Tim
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
RDS(ON)
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250 uA
VDS = VGS, ID =250 uA
VGS = ±20 V, VDS = 0 V
VDS = 24 V, VGS = 0 V
VGS = 10 V, ID = 5.8 A
VGS = 4.5 V, ID = 5 A
VDS = 5 V, ID = 5 A
VGS = 0 V, IS = 1 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDS = 15 V, RL = 2.3R,
VGS = 10V, RGEN=3R
Min Typ Max Unit
30 -- -- V
1 1.5 3
V
--
--
±100
nA
-- -- 1 uA
-- 19 24
mR
-- 23 30
10 15
--
S
-- 0.71 1
V
-- 545 --
-- 103 --
pF
-- 80 --
-- -- 18
ns
-- -- 70
Notes:
a: Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper
b: Pulse width<380µs, Duty Cycle<2%
c: Maximum junction temperature TJ=150°C.
SSC-V1.0
http://www.afsemi.com
3/6
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