SSC8028GT8

SSC8028GT8 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID  Applications  Desktop Computer  Notebook 20V ±16V 11mR@10V 16mR@4V5 12A  Pin configuration  General Description Top View This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Units:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8028GT8  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) ID IDM Total Power Dissipation (Note 1) PD Operating and Storage Junction Temperature Range TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise noted Limit 20 ±16 12 30 2.5 -55 to 150 Unit V V A A W °C Parameter Symbol Test Conditions Drain–Source Breakdow...