SSC8036GN3

SSC8036GN3 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon TYP 21mR@10V 32mR@4V5 ID 8.5A  Load Switch  Portable Devices  DCDC conversion  General Description  Pin configuration This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.  Package Information Package:DFN3X2 SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8036GN3 Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Total Power Dissipation (note1) Continuous Pulse TA = 25°C TA = 75°C ID IDM PD Operating and Storage Junction Temperature Range Note1: Surface Mounted on 1in2 pad area. TJ, TSTG  Electrical Characteristics @ TA = 25°C unless otherwise specified Ratings 30 ±20 8.5 50 3 2.1 -55 to +150 Unit V V A W °C Parameter(not...