Mode MOSFET. SSC8036GN3 Datasheet

SSC8036GN3 MOSFET. Datasheet pdf. Equivalent

SSC8036GN3 Datasheet
Recommendation SSC8036GN3 Datasheet
Part SSC8036GN3
Description N-Channel Enhancement Mode MOSFET
Feature SSC8036GN3; SSC8036GN3 N-Channel Enhancement Mode MOSFET  Features  Applications VDS 30V VGS ±20V RDSon .
Manufacture AFSEMI
Datasheet
Download SSC8036GN3 Datasheet




AFSEMI SSC8036GN3
SSC8036GN3
N-Channel Enhancement Mode MOSFET
Features
Applications
VDS
30V
VGS
±20V
RDSon TYP
21mR@10V
32mR@4V5
ID
8.5A
Load Switch
Portable Devices
DCDC conversion
General Description
Pin configuration
This device uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Package Information
Package:DFN3X2
SSC-V1.0
http://www.afsemi.com
1/5
Analog Future



AFSEMI SSC8036GN3
SSC8036GN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
Total Power Dissipation (note1)
Continuous
Pulse
TA = 25°C
TA = 75°C
ID
IDM
PD
Operating and Storage Junction Temperature Range
Note1: Surface Mounted on 1in2 pad area.
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings
30
±20
8.5
50
3
2.1
-55 to +150
Unit
V
V
A
W
°C
Parameter(note2)
Symbol
Test Conditions
Min Typ Max Unit
STATIC CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Static Drain–Source On–Resistance
V(BR)DSS
VGS = 0 V, ID = 250uA
IDSS VDS = 30 V, VGS = 0 V
IGSS VGS = ± 20 V, VDS = 0 V
VGS(TH)
VDS = VGS, ID = 250uA
RDS(ON)
VGS = 10 V, ID = 5.5 A
VGS = 4.5 V, ID = 4.5 A
DYNAMIC CHARACTERISTICS
30
--
--
1
--
--
-- -- V
-- 1 uA
--
±100
nA
1.5 3
V
21 28
mR
32 43
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
QGS
QGD
VDS=15V, ID=8.5A,
VGS=10V
7.58
1.26
1.66
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 15 V, VGS = 0 V,
F = 1MHz
-- 390.07
-- 86.16
-- 59.31
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Tim
Turn–Off Fall Time
TD(ON)
TR
TD(OFF)
TF
-- --
VGEN=10V, VDD=15V, -- --
RL=15,
RGEN=3, ID=1A
-- --
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
--
--
--
10.12
3.12
22.16
2.96
nC
pF
nS
Max. Diode Forward Current
IS
Diode Forward Voltage
VSD VGS = 0 V, IS = 1 A
Note2: Short duration test pulse used to minimize self-heating effect.
-- -- 4.3 A
-- -- 1.0 V
2/5
SSC-V1.0
http://www.afsemi.com
Analog Future



AFSEMI SSC8036GN3
Typical Performance Characteristics
SSC8036GN3
SSC-V1.0
http://www.afsemi.com
3/5
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)