Mode MOSFET. SSC8424GS1 Datasheet

SSC8424GS1 MOSFET. Datasheet pdf. Equivalent

SSC8424GS1 Datasheet
Recommendation SSC8424GS1 Datasheet
Part SSC8424GS1
Description N-Channel Enhancement Mode MOSFET
Feature SSC8424GS1; SSC8424GS1 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 8.5mR@10V .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8424GS1
SSC8424GS1
N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±8V
RDSon TYP
8.5mR@10V
10.5mR@4V5
ID
11A
General Description
This device uses advanced trench technology to provide
excellent RDS(ON) and low gate charge. This device is
suitable for use as a load switch or in PWM applications.
Applications
Load Switch
PC/NB
DCDC conversion
Pin configuration
Top View
DDD
D
Package Information
SSSG
⑧ ⑦ ⑥⑤
② ③④
SOP8
Unit:mm
SSC-V1.0
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AFSEMI SSC8424GS1
SSC8424GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 1)
Plused Drain Current (Note 2)
Total Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
VDSS
VGSS
ID
IDM
PD
TJ, TSTG
N-channel
20
±8
11
44
2
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain–Source Breakdown Voltage
Gate Threshold Voltage
Gate–Body Leakage Current
Zero Gate Voltage Drain Current
Symbol
V(BR)DSS
VGS(TH)
IGSS
IDSS
Drain–Source On–State Resistance
RDS(ON)
Forward Transconductance
Diode Forward Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–Off Delay Tim
GFS
VSD
CISS
COSS
CRSS
TD(ON)
TD(OFF)
Test Conditions
VGS = 0 V, ID = 250μA
VDS = VGS, ID =250μA
VGS = ± 8 V, VDS = 0 V
VDS = 20 V, VGS = 0 V
VGS = 10 V, ID = 10 A
VGS = 4.5 V, ID = 8 A
VGS = 2.5 V, ID = 5A
VDS = 15 V, ID = 12 A
VGS = 0 V, IS = 1A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDS = 15 V, RL = 2.3R,
VGS = 4.5V, RGEN=3R
Min Typ Max
20 --
--
0.40
--
1.1
-- -- ±100
-- -- 1
-- 8.5 11
--
10.5
15
-- 14 17
8 16 --
-- 0.8 1.5
-- 1200 --
-- 200 --
-- 105 --
-- -- 18
-- -- 70
Unit
V
V
nA
uA
mR
S
V
pF
ns
Note :
1. DUT is mounted on a 1in 2 FR-4 board with 2oz. Copper in a still air environment at 25°Cthe current rating is based on
the DC<10stest conditions.
2. Repetitive rating, pulse width limited by junction temperature.
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AFSEMI SSC8424GS1
3. Typical Performance Characteristics
20
18 VGS=2.5,4.5,10V
16
14 VGS=2V
12
10
8
6
4 V =1.5V
GS
2
0
01234
VDS, Drain-Source Voltage (V)
Fig1. Output Characteristics
5
1000
900
800
700
600
500
400
300
200
100
0
0
5 10 15 20
VDS, Drain-to-Source Voltage(V)
Fig3. Capacitance
SSC8424GS1
10
9 -55oC
8 25oC
7 125oC
6
5
4
3
2
1
0
01234
VGS, Gate-Source Voltage(V)
Fig2. Transfer Characteristics
30
25
20
15
10
5
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Fig4. On Resistance vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Fig5. Gate Threshold vs. Temperature
101
125oC
100
25oC
10-1
-55oC
10-2
10-3
0.0 0.2 0.4 0.6 0.8 1.0
V , Source-to-Drain Voltage(V)
SD
Fig6. Body Diode Forward Characteristics
SSC-V1.0
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