Mode MOSFET. SSC8124GT3 Datasheet

SSC8124GT3 MOSFET. Datasheet pdf. Equivalent

SSC8124GT3 Datasheet
Recommendation SSC8124GT3 Datasheet
Part SSC8124GT3
Description N-Channel Enhancement Mode MOSFET
Feature SSC8124GT3; SSC8124GT3 N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP 22mR@4V5 ID  Applic.
Manufacture AFSEMI
Datasheet
Download SSC8124GT3 Datasheet




AFSEMI SSC8124GT3
SSC8124GT3
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
22mR@4V5
ID
Applications
Load Switch
Portable Devices
DCDC Conversion
20V ±8V
25mR@2V5 10A
32mR@1V8
Pin Configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8124GT3
SSC8124GT3
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
20
±8
10
25
2.5
-55 to +150
Unit
V
V
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V(BR)DSS VGS = 0 V, ID = 10uA
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±8 V, VDS = 0 V
ON CHARACTERISTICS(2)
20 --
-- --
-- --
Gate Threshold Voltage
Static Drain–Source On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 50uA
VGS = 4.5 V, ID = 5 A
RDS(ON) VGS = 2.5 V, ID = 3.5 A
VGS = 1.8 V, ID = 2.8 A
GFS VDS = 5 V, ID = 3.6 A
DYNAMIC CHARACTERISTICS
0.4 0.6
-- 22
-- 25
-- 32
27
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS
-- 469
-- 81
-- 49
Turn–On Delay Time
TD(ON)
-- --
Turn–On Rise Time
Turn–Off Delay Tim
TR
TD(OFF)
VDD = 5 V, ID = 3.6A,
VGS =4.5 V,RGEN=6R
-- --
-- --
Turn–Off Fall Time
TF
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
0.6 0.8
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
2.
Max Unit
--
1
±100
V
uA
nA
1.0 V
31
37 mR
47
14 S
--
-- pF
--
15
80
nS
60
25
1.15 V
2/4
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8124GT3
SSC8124GT3
Typical Performance Characteristics
10
VGS=2.5,3,4.5,6,10V
8
VGS=2V
6
4
VGS=1.5V
2
V =1V
GS
0
01234
VDS, Drain-Source Voltage (V)
Fig1. Output Characteristics
5
1000
900
800
700
600
500
400
300
200
100
0
0
5 10 15 20
VDS, Drain-to-Source Voltage(V)
Fig3. Capacitance
1.0
0.8
0.6
0.4
0.2
0.0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Fig5. Gate Threshold Vs. Temperature
10
9 -55oC
8 25oC
7 125oC
6
5
4
3
2
1
0
01234
VGS, Gate-Source Voltage(V)
Fig2. Transfer Characteristics
60
55
50
45
40
35
30
25
20
15
10
5
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Fig4. On Resistance Vs. Temperature
101
125oC
100
25oC
10-1
-55oC
10-2
10-3
0.0 0.2 0.4 0.6 0.8 1.0
VSD, Source-to-Drain Voltage(V)
Fig6. Body Diode Forward Characteristics
SSC-V1.0
http://www.afsemi.com
3/4
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