SSC8034GS6

SSC8034GS6 N-Channel Enhancement Mode MOSFET  Features  VDS VGS 30V ±12V RDSon TYP 24mR@10V 27mR@4V5 39mR@2V5 ID 6A   General Description This device uses advanced trench technology to provide excellent RDS(ON) and low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.  Package Information Applications  Load Switch  Portable Devices  DCDC conversion Pin configuration Top View D 3 12 GS ③ ①② SOT23 Units:mm SSC-V1.0 http://www.afsemi.com h // S i P 1/4 Analog Future SSC8034GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Plused Drain Current (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range VDSS VGSS ID IDM PD TJ, TSTG N-channel 30 ±12 6 30 850 -55 to +150 Unit V V A A mW °C  Electrical Chara...