Mode MOSFET. SSC8022GS6 Datasheet

SSC8022GS6 MOSFET. Datasheet pdf. Equivalent

SSC8022GS6 Datasheet
Recommendation SSC8022GS6 Datasheet
Part SSC8022GS6
Description N-Channel Enhancement Mode MOSFET
Feature SSC8022GS6; SSC8022GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45m.
Manufacture AFSEMI
Datasheet
Download SSC8022GS6 Datasheet




AFSEMI SSC8022GS6
SSC8022GS6
N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±12V
RDSon TYP
35mR@4V5
45mR@2V5
ID
3.5A
Applications
Load Switch
Portable Devices
DCDC conversion
Pin configuration
General Description
Top View
This device is produced with high cell density DMOS
trench technology, which is especially used to minimize
on-state resistance. This device particularly suits low
voltage applications such as portable equipment, power
management and other battery powered circuits, and
low in-line power dissipation are needed in a very small
outline surface mount package. Excellent thermal and
electrical capabilities.
Package Information
D: Drain; G: Gate; S: Source
SOT23
Unit:mm
SSC-V1.1
http://www.afsemi.com
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AFSEMI SSC8022GS6
Order information
Device
Package
SSC8022GS6
SOT23
SSC8022GS6
Marking
Shipping
3000/Tape&Reel
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation(1)
Continuous
Pulsed
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
V(BR)DSS VGS = 0 V, ID = 10uA
IDSS VDS = 20 V, VGS = 0 V
IGSS VGS = ±12 V, VDS = 0 V
ON CHARACTERISTICS(2)
Gate Threshold Voltage
Static Drain–Source On-Resistance
Forward Transconductance
VGS(TH) VDS = VGS, ID = 50uA
RDS(ON)
VGS = 4.5 V, ID = 3.6 A
VGS = 2.5 V, ID = 3.1 A
GFS VDS = 5 V, ID = 3.6 A
SSC-V1.1
http://www.afsemi.com
Ratings
20
±12
3.5
10
550
-55 to +150
Unit
V
V
A
mW
°C
Min Typ Max Unit
20 -- -- V
-- -- 1 uA
--
--
±100
nA
0.4 0.7 1.2
V
-- 35 80
mR
-- 45 100
2 7.7 14 S
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AFSEMI SSC8022GS6
SSC8022GS6
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10 V, VGS = 0 V,
f = 1.0 MHz
-- 450
-- 70
-- 43
SWITCHING CHARACTERISTICS
Turn–On Delay Time
TD(ON)
-- --
Turn–On Rise Time
Turn–Off Delay Tim
TR
TD(OFF)
VDD = 5 V, ID = 3.6A,
VGS =4.5 V,RGEN=6R
-- --
-- --
Turn–Off Fall Time
TF
-- --
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage(2)
VSD VGS = 0 V, IS = 1.1 A
Notes :
1. Surface Mounted on FR4 Board, t < 10 sec.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
0.6 0.8
--
--
--
15
80
60
25
1.15
pF
nS
V
SSC-V1.1
http://www.afsemi.com
3/5
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