SSC8022GS6

SSC8022GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 35mR@4V5 45mR@2V5 ID 3.5A  Applications  Load Switch  Portable Devices  DCDC conversion  Pin configuration  General Description Top View This device is produced with high cell density DMOS trench technology, which is especially used to minimize on-state resistance. This device particularly suits low voltage applications such as portable equipment, power management and other battery powered circuits, and low in-line power dissipation are needed in a very small outline surface mount package. Excellent thermal and electrical capabilities.  Package Information D: Drain; G: Gate; S: Source ③ ①② SOT23 Unit:mm SSC-V1.1 http://www.afsemi.com 1/5 Analog Future  Order information Device Package SSC8022GS6 SOT23 SSC8022GS6 Marking Shipping 3000/Tape&Reel  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage...