SSC8020GS6
N-Channel Enhancement Mode MOSFET
Features
VDS 20V
VGS ±8V
RDSon TYP 140mR@4V5 180mR@2V5 270mR@1V8
ID 750mA
General Description
This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powe...
