Mode MOSFET. SSC8020GS8 Datasheet

SSC8020GS8 MOSFET. Datasheet pdf. Equivalent

SSC8020GS8 Datasheet
Recommendation SSC8020GS8 Datasheet
Part SSC8020GS8
Description N-Channel Enhancement Mode MOSFET
Feature SSC8020GS8; SSC8020GS8 N-Channel Enhancement Mode MOSFET  Features  VDS 20V VGS ±8V RDSon TYP 140mR@4V5 .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8020GS8
SSC8020GS8
N-Channel Enhancement Mode MOSFET
Features
VDS
20V
VGS
±8V
RDSon TYP
140mR@4V5
180mR@2V5
270mR@1V8
ID
0.6A
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital Transistor
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
Package Information
Package:SOT523
Unit:mm
Dim Min
Typ Max
A 0.15 0.22 0.30
B 0.75 0.80 0.85
C 1.45 1.60 1.75
D -- 0.50 --
G 0.90 1.00 1.10
H 1.50 1.60 1.70
J
0.00
0.05 0.10
K 0.60 0.75 0.80
L 0.10 0.22 0.30
M 0.10 0.12 0.20
N 0.45 0.50 0.65
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AFSEMI SSC8020GS8
SSC8020GS8
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Drain Current (Note 1)
Continuous
Pulsed
ID
0.6
3
Power Dissipation Derating above TA = 25°C (Note 1)
Pd
175
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Unit
V
A
mW
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0 V, ID = 250μA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±8V, VDS = 0V
ON CHARACTERISTICS
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
ID = 600mA,VGS = 4.5V
ID = 500mA,VGS = 2.5V
ID = 350mA,VGS = 1.8V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
td(on)
VDD = -6V, RL = 6R, ΙD = −1Α,
td(off)
VGEN = -4.5V, RG = 6R
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
BODY DIODE CHARACTERISTICS
Diode Forward Voltage(1)
VSD VGS = 0 V, IS = 150mA
Note 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±100
V
uA
nA
0.35 --
-- 140
-- 180
-- 270
1
450
765
850
V
mR
-- 6 --
-- 28 --
ns
-- 130 --
-- 20 --
-- 16 --
pF
-- 0.68 1.2
V
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AFSEMI SSC8020GS8
SSC8020GS8
Typical Performance Characteristics
5
VGS= 3.5V,4.0V,4.5V
4 VGS= 3.0V
V = 2.5V
GS
V = 2.0V
GS
3
2
1
V = 1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
1.0
VGS= 1.8V
0.8
3.0
3.5
V = 3.0V
DS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
200
0.5 1.0 1.5 2.0
VGS, Gate-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
150
0.6
0.4
VGS= 2.5V
0.2
VGS= 4.5V
0.0
012345
ID, Drain Current (A)
Figure 3. On Resistance vs. Drain Current
300
100 Ciss
50 Coss
Crss
0
0 5 10 15
VDS, Drain-Source Voltage (V)
Figure 4. Capacitance
1
20
250
VGS= 1.8V, ID= 0.15A
200 0.1
150
VGS= 4.5V, ID= 0.35A
100 0.01
50
0
-25 0 25 50 75 100 125
Tj Junction Temperature (oC)
Figure 5 . On resistance vs. Temperature
1E-3
0.2 0.4 0.6 0.8 1.0
VSD, Drain-Source Voltage (V)
Figure 6. Diode Forward Characteristics
3/5
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