SSC8020GS9

SSC8020GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID 240mR@4V5 280mR@2V5 20V ±8V 0.4A 410mR@1V8  450mR@1V5  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption. Applications  Replace Digital Transistor  Battery Operated Systems  Power Supply Converter Circuits  Load/Power Switching Cell Phones, Pagers Pin Configuration Top View  Package Information SSC-V1.0 http://www.afsemi.com 1/5 Analog Future SSC8020GS9  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Ratings Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8 Drain Current (Note 1) Continuous Pulsed ID 0.4 1.2 Power Dissipation Derating above TA = 25°C (Note 1) Pd 175 O...