Mode MOSFET. SSC8020GS9 Datasheet

SSC8020GS9 MOSFET. Datasheet pdf. Equivalent

SSC8020GS9 Datasheet
Recommendation SSC8020GS9 Datasheet
Part SSC8020GS9
Description N-Channel Enhancement Mode MOSFET
Feature SSC8020GS9; SSC8020GS9 N-Channel Enhancement Mode MOSFET  Features  VDS VGS RDSon TYP ID 240mR@4V5 280.
Manufacture AFSEMI
Datasheet
Download SSC8020GS9 Datasheet




AFSEMI SSC8020GS9
SSC8020GS9
N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
240mR@4V5
280mR@2V5
20V ±8V
0.4A
410mR@1V8
450mR@1V5
General Description
This device is a N-Channel enhancement mode
MOSFET which is produced with high cell density and
DMOS trench technology .This device particularly suits
low voltage applications, especially for battery powered
circuits, the tiny and thin outline saves PCB consumption.
Applications
Replace Digital Transistor
Battery Operated Systems
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Pin Configuration
Top View
Package Information
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8020GS9
SSC8020GS9
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±8
Drain Current (Note 1)
Continuous
Pulsed
ID
0.4
1.2
Power Dissipation Derating above TA = 25°C (Note 1)
Pd
175
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Unit
V
A
mW
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Drain–Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Test Conditions
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0 V, ID = 250μA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±8V, VDS = 0V
ON CHARACTERISTICS
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
ID = 400mA,VGS = 4.5V
ID = 300mA,VGS = 2.5V
ID = 200mA,VGS = 1.8V
ID = 100mA,VGS = 1.5V
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
td(on)
VDD = -6V, RL = 6R, ΙD = −1Α,
td(off)
VGEN = -4.5V, RG = 6R
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
BODY DIODE CHARACTERISTICS
Diode Forward Voltage(1)
VSD VGS = 0 V, IS = 150mA
Note 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±100
V
uA
nA
0.35 --
-- 240
-- 280
-- 410
-- 450
1
450
765
850
950
V
mR
-- 6 --
-- 28 --
ns
-- 130 --
-- 20 --
-- 16 --
pF
-- 0.68 1.2
V
SSC-V1.0
http://www.afsemi.com
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AFSEMI SSC8020GS9
SSC8020GS9
Typical Performance Characteristics
5
VGS= 3.5V,4.0V,4.5V
4 VGS= 3.0V
V = 2.5V
GS
V = 2.0V
GS
3
2
1
V = 1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5
VDS, Drain-Source Voltage (V)
Figure 1. Output Characteristics
1.0
VGS= 1.8V
0.8
3.0
0.6
0.4
VGS= 2.5V
0.2
VGS= 4.5V
0.0
012345
ID, Drain Current (A)
Figure 3. On Resistance vs. Drain Current
3.5
V = 3.0V
DS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
200
0.5 1.0 1.5 2.0
VGS, Gate-Source Voltage(V)
Figure 2. Transfer Characteristics
2.5
150
100 Ciss
50 Coss
Crss
0
0 5 10 15
VDS, Drain-Source Voltage (V)
Figure 4. Capacitance
20
SSC-V1.0
http://www.afsemi.com
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