SSC8120GS6

SSC8120GS6 N-Channel Enhancement Mode MOSFET  Features VDS 20V VGS ±12V RDSon TYP 310mR@4V5 490mR@2V5 850mR@1V8 ID 1.2A ESD 1.2K  General Description This device is a N-Channel enhancement mode MOSFET which is produced with high cell density and DMOS trench technology .This device particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB consumption.  Applications  Load Switch  Portable Devices  DCDC Conversion  Pin configuration Top View  Package Information ③ ①② SOT23 Unit:mm SSC-V1.0 http://www.afsemi.com 1/4 Analog Future SSC8120GS6  Absolute Maximum Ratings @ TA = 25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation(1) Continuous Pulsed Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD TJ, TSTG Ratings 20 ±12 1.2 3 250 -55 to +150  Electrical Characteristics @ TA = 25°C unle...