SSC8336GS1
Dual N-Channel Enhancement Mode MOSFET
Features
Applications Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V 20mR@4V5
9A
Pin configuration
General Description
Top View
This N-Channel enhancement mode power FETs are produced with high
cell density, DMOS trench technology, which is especially used to
minimize on-state resis...
