Mode MOSFET. SSC8336GS1 Datasheet

SSC8336GS1 MOSFET. Datasheet pdf. Equivalent

SSC8336GS1 Datasheet
Recommendation SSC8336GS1 Datasheet
Part SSC8336GS1
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8336GS1; SSC8336GS1 Dual N-Channel Enhancement Mode MOSFET  Features  Applications  Inverter; VDS VGS .
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Datasheet
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AFSEMI SSC8336GS1
SSC8336GS1
Dual N-Channel Enhancement Mode MOSFET
Features
Applications
Inverter;
VDS VGS
RDSon TYP
ID
30V ±20V
16mR@10V
20mR@4V5
9A
Pin configuration
General Description
Top View
This N-Channel enhancement mode power FETs are produced with high
cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device is suitable for use as a load
switchpower management in PWM controlled DC/DC Converter and
push-pull DC/AC Inverter Systems.
Package Information
Ordering Information
Device
SSC8336GS1
Marking
SSC
8336GS1
Package
SOP8
Qty per Reel
2500
Reel Size
13 Inch
SSC-1V0
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AFSEMI SSC8336GS1
Thermal resistance ratings
SSC8336GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Continuous Drain Current@TA=25o
ID
Plused Drain Current (Note 1)
IDM
Total Power Dissipation (Note 2)
PD
Operating and Storage Junction Temperature Range
TJ, TSTG
N-channel
30
±20
9
36
2
-55 to +150
Notes
1:Ratings are based on low frequency and duty cycles to keep initialTJ=25o.
2:The power dissipationg PD is based on TJ(MAX)=150o,using≤10s junction-to-ambient thermal resistance.
Unit
V
V
A
A
W
°C
SSC-1V0
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AFSEMI SSC8336GS1
SSC8336GS1
N-channel Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min
DrainSource Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 uA
30
Gate Threshold Voltage
GateBody Leakage Current
VGS(TH)
IGSS
VDS = VGS, ID =250 uA
VGS = ±20 V, VDS = 0 V
1.3
--
Zero Gate Voltage Drain Current
IDSS VDS = 24 V, VGS = 0 V
--
DrainSource OnState Resistance
RDS(ON)
VGS = 10 V, ID = 6.9A
VGS = 4.5 V, ID = 5.8A
--
--
Forward Transconductance
GFS VDS = 5 V, ID = 5 A
--
Diode Forward Voltage
VSD VGS = 0 V, IS = 1.7 A
--
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
TurnOff Delay Tim
CISS
COSS
CRSS
TD(ON)
TD(OFF)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VDs = 15 V, RL = 2.3R,
VGS = 10V, RGEN=3R
--
--
--
--
--
Typ
--
1.5
--
--
16
20
7.3
0.79
570
113
57
5.5
21
Max
--
2.1
±100
1
18
23
--
1
750
--
--
8
25
Unit
V
V
nA
uA
mR
S
V
pF
nS
SSC-1V0
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