Mode MOSFET. SSC8326GS1V1.0 Datasheet

SSC8326GS1V1.0 MOSFET. Datasheet pdf. Equivalent

SSC8326GS1V1.0 Datasheet
Recommendation SSC8326GS1V1.0 Datasheet
Part SSC8326GS1V1.0
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8326GS1V1.0; SSC8326GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 20mR@.
Manufacture AFSEMI
Datasheet
Download SSC8326GS1V1.0 Datasheet




AFSEMI SSC8326GS1V1.0
SSC8326GS1
Dual N-Channel Enhancement Mode MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP
20mR@4V5
22mR@3V8
24mR@2V5
ID
6A
General Description
This device combines 2 N-channel enhancement
mode MOSFETs,which use advanced trench
technology to provide excellent RDS(ON) , low gate
charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in
PWM applications.
Package Information
Applications
Li-ion battery;
Load swich;
Battery charger
Pin configuration
Top View
D1 D1 D2 D2
S1 G1 S2 G2
⑧ ⑦ ⑥⑤
② ③ ④
SOP8
Unit:mm
SSC-1V0
1/5
http://www.afsemi.com



AFSEMI SSC8326GS1V1.0
Order information
Device
Package
SSC8326GS1
Marking
Shipping
SSC8326GS1
SOP-8
2500/Tape&Reel
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current a VGS@4.5V TA = 25°C
Continuous Drain Current a VGS@4.5V TA = 70°C
Plused Drain Current b
Power Dissipation a TC = 25°C
Power Dissipation a TC = 70°C
Lead Temperature
Storage and Junction Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TL
TJ, TSTG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient a C
t10S
Steady-State
Steady-State
Symbol
RJA
RJC
Max
20
±12
6
5
35
3.1
2
260
-55 to +150
Typ Max
35 50
69 87
26 35
Unit
V
A
A
A
W
W
°C
°C
Units
°C/W
°C/W
°C/W
SSC-1V0
2/5
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AFSEMI SSC8326GS1V1.0
SSC8326GS1
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
Min Typ Max
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250uA
20 -- --
Zero Gate Voltage Drain Curren
Gate-Body Leakage
IDSS
VDS = 20V, VGS = 0V
-- -- 1
IGSS
VGS = ±12V, VDS = 0V
-- -- ±100
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250uA
0.5 0.70 1
Static Drain-Source On-Resistance
RDS (ON)
VGS = 4.5V, ID = 2A
VGS = 3.8V, ID =2A
VGS = 2.5V, ID =2A
-- 20 24
-- 22 25
-- 24 34
Forward Transconductance
GFS
VDS =10V, ID = 6A
-- 5 --
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10V, VGS = 0V
F = 1.0MHz
-- 610 --
-- 335 --
-- 148 --
Total Gate Charge
Gate-Source Charge
Gate-Drain
QG -- 11 --
VDS=10V, ID=6A,
QGS -- 3.1 --
VGS=4.5V
QGD -- 2.6 --
Diode Forward Voltage
VSD
VGS = 0 V, IS = 1.7 A
-- 0.74 1.3
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Notes :
TD(ON)
TD(OFF)
VDD = 10V, ID = 1Α,
VGEN = 4.5V, RG = 6R
-- 8 --
-- 35 --
a: mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
b:Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
c: mounted on FR-4 minimum pad board, in a still air environment with T A =25°C.
Unit
V
uA
nA
V
mR
S
pF
nC
V
ns
SSC-1V0
3/5
http://www.afsemi.com







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