Mode MOSFET. SSC8362GS1 Datasheet

SSC8362GS1 MOSFET. Datasheet pdf. Equivalent

SSC8362GS1 Datasheet
Recommendation SSC8362GS1 Datasheet
Part SSC8362GS1
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8362GS1; SSC8362GS1 Dual N-Channel Enhancement Mode MOSFET  Features VDS 60V VGS ±20V RDSon TYP 30mR@10.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8362GS1
SSC8362GS1
Dual N-Channel Enhancement Mode MOSFET
Features
VDS
60V
VGS
±20V
RDSon TYP
30mR@10V
35mR@4V5
ID
6.5A
General Description
This N-Channel enhancement mode power FETs are
produced with high cell density, DMOS trench technology,
which is especially used to minimize on-state resistance.
This device is suitable for use as a load switchpower
management in PWM controlled DC/DC Converter and
push-pull DC/AC Inverter Systems.
Package Information
Applications
Inverter;
Pin configuration
Top View
⑧ ⑦ ⑥⑤
② ③ ④
SOP8
Unit:mm
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AFSEMI SSC8362GS1
SSC8362GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
Total Power Dissipation (note1,2)
Operating and Storage Junction Temperature Range
Note:
1. Surface Mounted on 1in pad area, t 10sec.
2. Rating for a single chip.
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Ratings
60
±20
6.5
1.5
-55 to +150
Unit
V
V
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
GateBody Leakage
Gate Threshold Voltage
Static DrainSource OnResistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
TurnOn Delay Time
TurnOn Rise Time
TurnOff Delay Tim
TurnOff Fall Time
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(TH)
RDS(ON)
CISS
COSS
CRSS
TD(ON)
TR
TD(OFF)
TF
VSD
VGS = 0 V, ID = 250 uA
VDS = 60 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 uA
VGS = 10 V, ID = 6.5 A
VGS = 4.5 V, ID = 4.5 A
VDS = 10 V, VGS = 0 V,
F = 1MHz
VGS=10V, VDS=30V,
RL=5.4R,
RGEN=3R, ID=5.5A
VGS = 0 V, IS = 2 A
60 -- -- V
-- -- 1 uA
--
--
±100
nA
1 1.4 3
V
-- 30 41
mR
-- 35 52
-- 1180 --
-- 170 --
pF
-- 100 --
-- -- 15
-- -- 20
nS
-- -- 40
-- -- 15
0.5 0.77 1.0
V
Note: 1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2: Repetitive rating, pulse width limited by junction temperature.
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AFSEMI SSC8362GS1
Typical Performance Characteristics
20
V =4.5V,5V,6V,10V
GS
16
V =4V
GS
12
V =3.5V
GS
V = 3V
GS
8
V = 2.5V
4 GS
V = 2V
GS
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
60
50
40
30
0 5 10 15 20
I , Drain Current (A)
D
Figure 3. On Resistance vs. Drain Current
SSC8362GS1
15
12
V = 5V
DS
9
6
3
0
2.0 2.5 3.0 3.5 4.0
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
1400
1200
1000
800
600
400
200
0
0
Ciss
Crss
Coss
5 10 15 20 25 30 35
V , Drain-Source Voltage (V)
DS
Figure 4. Capacitance
40
10
60
VGS= 4.5V, ID= 3A
40
VGS= 10V, ID= 4.5A
8
6
4
20
-40 0
40 80 120 160
Tj Junction Temperature (oC)
Figure 5 . On resistance vs. Temperature
2
0
0.4 0.6 0.8 1.0
V , Drain-Source Voltage (V)
DS
Figure 6. Diode Forward Characteristics
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