Document
SSC8428GSB
Common Drain N-Channel Enhancement Mode MOSFET
Features
VDS VGS 20V ±12V
RDSon TYP 13mR@10V 15mR@4V5
ID 7.5A
Applications
Li-ion battery protection
Load switch
Pin configuration
Top View
Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current
General Description The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
SOT23-6
Package Information
⑥ ⑤④
①②
③
SSC-1V0
Units:mm SOT23-6L
http://www.afsemi.com
1/5
Analog Future
SSC8428GSB
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Currentnote1
TA=25℃ TA=100℃
ID
Pulsed Drain Current Total Power Dissipati.