Mode MOSFET. SSC8428GSB Datasheet

SSC8428GSB MOSFET. Datasheet pdf. Equivalent

SSC8428GSB Datasheet
Recommendation SSC8428GSB Datasheet
Part SSC8428GSB
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8428GSB; SSC8428GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP .
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8428GSB
SSC8428GSB
Common Drain N-Channel Enhancement Mode MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP
13mR@10V
15mR@4V5
ID
7.5A
Applications
Li-ion battery protection
Load switch
Pin configuration
Top View
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current handling capability
Fully Characterized Avalanche Voltage and Current
General Description
The SSC8428GSB combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load
switch and battery protection applications.
SOT23-6
Package Information
⑥ ⑤④
①②
SSC-1V0
Units:mm
SOT23-6L
http://www.afsemi.com
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AFSEMI SSC8428GSB
SSC8428GSB
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Currentnote1
TA=25
TA=100
ID
Pulsed Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
IDM
PD
Topr
Storage Temperature Range
Tstg
Note1The maximum current rating is package limited.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Ratings
20
±12
7.5
5.6
30
1.2
150
-55/150
Unit
V
A
W
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Current
Source-drain (diode forward) voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
OFF CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
VGS = 0V, ID = 250uA
VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.5A
GFS VDS =5V, ID = 4.5A
IS
VSD VGS=0V,ID=0.5A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 8V, VGS = 0V
F = 1.0MHz
QG
QGS
QGD
VDS=10V, ID=6A,
VGS=4.5V
SWITCHING CHARACTERISTICS
TD(ON)
tr
TD(off)
tf
VDD = 10V, RL=10Ω,ID = 1Α,
VGEN = 4.5V, RG = 6R
Min Typ Max
20 -- --
-- -- 1
-- -- ±100
0.5 0.7 1
-- 13 16
-- 15 18
-- 8 --
-- -- 1.7
-- 0.8 1.3
-- 600 --
-- 330 --
-- 140 --
-- 10 15
-- 2.3 --
-- 2.9 --
-- 8 20
10 25
-- 35 70
30 60
Unit
V
uA
nA
V
mR
S
A
V
pF
nC
ns
2/5
SSC-1V0
http://www.afsemi.com
Analog Future



AFSEMI SSC8428GSB
Typical Performance Characteristics
SSC8428GSB
SSC-1V0
http://www.afsemi.com
3/5
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