DatasheetsPDF.com

SSC8428GSB Dataheets PDF



Part Number SSC8428GSB
Manufacturers AFSEMI
Logo AFSEMI
Description Dual N-Channel Enhancement Mode MOSFET
Datasheet SSC8428GSB DatasheetSSC8428GSB Datasheet (PDF)

SSC8428GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A  Applications  Li-ion battery protection  Load switch  Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428GSB combines advanced trench MOSFET technology with a low resistance p.

  SSC8428GSB   SSC8428GSB



Document
SSC8428GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 7.5A  Applications  Li-ion battery protection  Load switch  Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428GSB combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. SOT23-6  Package Information ⑥ ⑤④ ①② ③ SSC-1V0 Units:mm SOT23-6L http://www.afsemi.com 1/5 Analog Future SSC8428GSB  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Currentnote1 TA=25℃ TA=100℃ ID Pulsed Drain Current Total Power Dissipati.


SSC8322GN2 SSC8428GSB SSC8205GSB


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)