Mode MOSFET. SSC8205GSB Datasheet

SSC8205GSB MOSFET. Datasheet pdf. Equivalent

SSC8205GSB Datasheet
Recommendation SSC8205GSB Datasheet
Part SSC8205GSB
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC8205GSB; SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 20mR.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8205GSB
SSC8205GSB
Common Drain N-Channel Enhancement Mode MOSFET
Features
VDS VGS
RDSon TYP
ID
20mR@4V5
20V ±12V 22mR@3V85
6A
24mR@2V5
Advanced trench process technology
High Density Cell Design for Ultra Low On-Resistance
High Power and Current handling capability
Fully Characterized Avalanche Voltage and Current
General Description
Case: SOT23-6
Case Material: Molded Plastic. UL Flammability
Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Solderable per MIL-STD-202, Method 208
Applications
Li-ion battery protection ;
Load swich
Pin configuration
Top View
PIN NUMBER
1
2
3
4
5
6
SOT23-6L
NAME
S1
D
S2
G2
D
G1
FUNCTION
SOURCE1
DRAIN
SOURCE2
GATE2
DRAIN
GATE1
Package Information
⑥ ⑤④
①②
SSC-1V0
Units:mm
SOT23-6L
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AFSEMI SSC8205GSB
SSC8205GSB
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Operating and Storage Temperature Range
Storage Temperature Range
Symbol
VDSS
VGSS
ID
PD
Topr
Tstg
Ratings
20
±12
6
1.25
150
-55/150
Unit
V
A
mW
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Curren
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Drain-Source Diode Forward Current
Source-drain (diode forward) voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
Symbol
Test Conditions
OFF CHARACTERISTICS (Note 2)
V(BR)DSS
IDSS
VGS = 0V, ID = 250uA
VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
VGS = 4.5V, ID = 2A
VGS = 3.8V, ID = 2A
VGS = 2.5V, ID =2A
GFS VDS =5V, ID = 4.5A
IS
VSD VGS=0V,ID=1.25A
DYNAMIC CHARACTERISTICS
CISS
COSS
CRSS
VDS = 8V, VGS = 0V
F = 1.0MHz
QG
QGS
QGD
VDS=10V, ID=6A,
VGS=4.5V
SWITCHING CHARACTERISTICS
TD(ON)
tr
TD(OFF)
VDD = 10V, RL=10Ω,ID = 1Α,
VGEN = 4.5V, RG = 6R
tf
Min Typ Max
20 22 --
-- 2.5 1000
-- -- ±100
0.5 0.72 1
-- 20 23
-- 22 25
-- 24 33
-- 10 --
-- -- 1.7
-- 0.8 1.0
-- 600 --
-- 330 --
-- 140 --
-- 10 15
-- 2.3 --
-- 2.9 --
-- 8 20
10 25
-- 35 70
30 60
Unit
V
nA
nA
V
mR
S
A
V
pF
nC
ns
SSC-1V0
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AFSEMI SSC8205GSB
Typical Performance Characteristics
SSC8205GSB
SSC-1V0
http://www.afsemi.com
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