SSC8428JN3

SSC8428JN3 Dual N-Channel Enhancement Mode MOSFET  Features VDS VGS 20V ±12V RDSon TYP 13mR@10V 15mR@4V5 ID 8A  Applications  Li-ion battery protection  Load switch  Pin configuration Top View Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  General Description The SSC8428JN3 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. DFN3X2  Package Information SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8428JN3  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current note1 TA=25℃ TA=100℃ ID Pulsed Drain Current Total Power Dissipation Operating and Storage Temperature Range IDM PD Top...