Mode MOSFET. SSC9926GS1 Datasheet

SSC9926GS1 MOSFET. Datasheet pdf. Equivalent

SSC9926GS1 Datasheet
Recommendation SSC9926GS1 Datasheet
Part SSC9926GS1
Description Dual N-Channel Enhancement Mode MOSFET
Feature SSC9926GS1; SSC9926GS1 Dual N-Channel Enhancement Mode MOSFET  Features  VDS VGS 20V ±12V RDSon TYP 21mR@.
Manufacture AFSEMI
Datasheet
Download SSC9926GS1 Datasheet




AFSEMI SSC9926GS1
SSC9926GS1
Dual N-Channel Enhancement Mode MOSFET
Features
VDS VGS
20V ±12V
RDSon TYP
21mR@4V5
22mR@3V8
26mR@2V5
ID
6A
General Description
This device combines 2 N-channel enhancement
mode MOSFETs,which use advanced trench
technology to provide excellent RDS(ON) , low gate
charge and operation with gate voltages as low as 2.5V.
This device is suitable for use as a load switch or in
PWM applications.
Package Information
Applications
Li-ion battery;
Load swich;
Battery charger
Pin configuration
Top View
D1 D1 D2 D2
S1 G1 S2 G2
⑧ ⑦ ⑥⑤
② ③ ④
SOP8
Unit:mm
SSC-1V0
http://www.afsemi.com
1/4
Analog Future



AFSEMI SSC9926GS1
SSC9926GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDSS
20
Gate-Source Voltage
VGSS
±12
Drain Current (Note 1)
ID 6
IDM 30
Total Power Dissipation (Note 1)
PD 800
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
Note: 1. Mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch, for each single die.
Unit
V
A
mW
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter
Symbol
Test Conditions
OFF CHARACTERISTICS (Note 2)
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250uA
Zero Gate Voltage Drain Curren
IDSS VDS = 20V, VGS = 0V
Gate-Body Leakage
IGSS VGS = ±12V, VDS = 0V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
VGS(TH)
RDS (ON)
GFS
VDS = VGS, ID = 250uA
VGS = 4.5V, ID = 2A
VGS = 3.8V, ID =2A
VGS = 2.5V, ID =2A
VDS =10V, ID = 6A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = 10V, VGS = 0V
F = 1.0MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain
QG
QGS
QGD
VDS=10V, ID=6A,
VGS=4.5V
Diode Forward Voltage
VSD VGS = 0 V, IS = 1.7 A
SWITCHING CHARACTERISTICS
Turn-On Delay Time
TD(ON)
VDD = 10V, ID = 1Α,
Turn-Off Delay Time
TD(OFF)
VGEN = 4.5V, RG = 6R
Note: 2. Short duration test pulse used to minimize self-heating effect.
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±100
V
uA
nA
0.5 0.75
-- 21
-- 22
-- 26
-- 5
1
24
25
34
--
V
mR
S
-- 600 --
-- 330 --
-- 140 --
-- 10 --
-- 2.3 --
-- 2.9 --
-- 0.74 1.3
pF
nC
V
-- 8 --
-- 35 --
ns
SSC-1V0
http://www.afsemi.com
2/4
Analog Future



AFSEMI SSC9926GS1
SSC9926GS1
Typical Performance Characteristics
10
V =2.5,3.0,3.5,4.0,4.5V
GS
8
V =2.0V
GS
6
4
V =1.5V
GS
2
V =1.0V
GS
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
10
-55oC
8 25oC
125oC
6
4
2
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
1000
900
800
700
600
500
400
300
200
100
0
0
Ciss
Crss
Coss
5 10 15 20
V , Drain-to-Source Voltage (V)
DS
Figure 3. Capacitance
50
45
40
35
30
25
20
15
10
5
0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance Vs. Temperature
1.0 101
125oC
0.8
100
25oC
0.6
10-1
0.4 -55oC
0.2 10-2
0.0
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Threshold Vs. Temperature
10-3
0.0 0.3 0.6 0.9 1.2 1.5
V , Body Diode Forward Voltage (v)
SD
Figure 6. Body Diode Forward Voltage
Vs. Source Current
SSC-1V0
http://www.afsemi.com
3/4
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)