SSC8205GTA

SSC8205GTA Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance High Power and Current handling capability Fully Characterized Avalanche Voltage and Current  Applications  Li-ion battery protection ;  Load swich  Pin configuration Top View  General Description Case: TSSOP-8 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals: Solderable per MIL-STD-202, Method 208  Package Information PIN NUMBER 1 2,3 4 5 6,7 8 NAME D S1 G1 G2 S2 D FUNCTION DRAIN SOURCE1 GATE1 GATE2 SOURCE2 DRAIN SSC-1V0 1/5 http://www.afsemi.com SSC8205GTA  Absolute Maximum Ratings @ TA = 25°C unless otherwise specified Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation Operating and Storage Temperature Ra...