SSC8329GS1

SSC8329GS1 Dual P-Channel Enhancement Mode MOSFET  Features VDS -20V VGS ±12V RDSon TYP 13mR@-4V5V 16mR@-2V5 ID -18A  Applications  Load Switch  DCDC conversion  NB battery  Pin configuration  General Description This device is produced with high cell density, DMOS Top View D1 D1 D2 trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage power management requiring a wild range of given voltage ratings(4.5V~25V) such as load switch and battery protection. S1 G1 S2  Package Information D2 G2 ⑧ ⑦ ⑥⑤ ①② ③ ④ SOP8 Unit:mm SSC-1V0 http://www.afsemi.com 1/5 Analog Future SSC8329GS1 Absolute Maximum Ratings @TA = 25℃ unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Continuous TA=25°C Pulsed (Note 2) Total Power Dissipation (Note 1) Operating and Storage Junction Temperature Range Symbol VDSS VGSS ID PD ...