Document
SSC8333GS1
Dual P-Channel Enhancement Mode MOSFET
Features
Applications
TFT panel power switch;
VDS -30V
VGS ±20V
RDSon TYP 61mR@-10V 77mR@-4V5
ID -4.5A
High Side DC/DC Converter High Side Driver for Brushless DC Motor
Portable DVD, DPF Pin configuration
General Description
Top View
D1 D1 D2 D2
This device combines 2 P-Channel enhancement mode
power FETs which are produced with high cell density,
DMOS trench technology, which is especially used to
minimize on-state resistance. This device is particularly
suited for low voltage application such as portable
S1 G1 S2 G2
equipment, power management and other battery
powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Package Information
⑧ ⑦ ⑥⑤
①② ③ ④
SOP8 Unit:mm
SSC-1V0
http://www.afsemi.com
1/4
Analog Future
SSC8333GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source V.