Mode MOSFET. SSC8333GS1 Datasheet

SSC8333GS1 MOSFET. Datasheet pdf. Equivalent

SSC8333GS1 Datasheet
Recommendation SSC8333GS1 Datasheet
Part SSC8333GS1
Description Dual P-Channel Enhancement Mode MOSFET
Feature SSC8333GS1; SSC8333GS1 Dual P-Channel Enhancement Mode MOSFET  Features  Applications  TFT panel power swi.
Manufacture AFSEMI
Datasheet
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AFSEMI SSC8333GS1
SSC8333GS1
Dual P-Channel Enhancement Mode MOSFET
Features
Applications
TFT panel power switch;
VDS
-30V
VGS
±20V
RDSon TYP
61mR@-10V
77mR@-4V5
ID
-4.5A
High Side DC/DC Converter
High Side Driver for Brushless DC Motor
Portable DVD, DPF
Pin configuration
General Description
Top View
D1 D1 D2 D2
This device combines 2 P-Channel enhancement mode
power FETs which are produced with high cell density,
DMOS trench technology, which is especially used to
minimize on-state resistance. This device is particularly
suited for low voltage application such as portable
S1 G1 S2 G2
equipment, power management and other battery
powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Package Information
⑧ ⑦ ⑥⑤
② ③ ④
SOP8
Unit:mm
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AFSEMI SSC8333GS1
SSC8333GS1
Absolute Maximum Ratings @ TA = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous TA=25°C
Drain Current (Note 1)
TA=70°C
Pulsed (Note 2)
Power Dissipation (Note 1)
Operating and Storage Junction Temperature Range
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Limit
-30
±20
-4.5
-3.1
-20
1.2
-55 to +150
Unit
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise noted
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
OFF CHARACTERISTICS
V(BR)DSS
VGS = 0 V, ID = 250 uA
-30
--
Zero Gate Voltage Drain Current
GateBody Leakage Current
IDSS
VDS = -24 V, VGS = 0 V
--
--
IGSS
VGS = ±20 V, VDS = 0 V
--
--
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =-250 uA
-1 -1.36
DrainSource OnState Resistance
RDS(ON)
VGS = -10 V, ID = -6 A -- 61
VGS = -4.5 V, ID = -4 A -- 77
Forward Transconductance
GFS
VDS = -5 V, ID = -6 A
-- 12
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
-- 550
VDS = -15 V, VGS = 0 V,
--
60
f = 1.0 MHz
-- 50
TurnOn Delay Time
TurnOff Delay Tim
SWITCHING CHARACTERISTICS
TD(ON)
TD(OFF)
VDS = -15 V, RL = 2.5R,
VGS = -10V, RGEN=3R
-- 8.6
-- 28.2
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Diode Forward Voltage
VSD
VGS = 0 V, IS = -1 A
-- -0.81
--
-1
±100
-3
70
85
--
--
--
--
--
--
-1.5
V
uA
nA
V
mR
S
pF
nS
V
Note: 1: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment
with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is
based on the DC thermal resistance rating.
2: Repetitive rating, pulse width limited by junction temperature.
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AFSEMI SSC8333GS1
Typical Performance Characteristics
10
V =3.5,4.0,4.5V
GS
8
V =3.0V
GS
6 V =2.8V
GS
4
V =2.4V
2 GS
V =2.0V
GS
0
012345
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
SSC8333GS1
8
7
-55oC
25oC
150oC
85oC
6
5
4
3
2
1
0
01234
V , Gate-to-source Voltage(V)
GS
Figure 2. Transfer Characteristics
800
700
600 Ciss
500
400
300
200
100
0
0
Coss
Crss
5 10 15
V , Drain-to-Source Voltage(V)
DS
Figure 3. Capacitance
20
140
120
100
80
60
40
20
0
-50 0
50 100 150
Tj, Junction Temperature (oC)
Figure 4. On Resistance vs. Temperature
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
-50 0 50 100 150
Tj, Junction Temperature (oC)
Figure 5. Gate Thershold vs. Temperature
10
1
0.1
0.0 0.3 0.6 0.9 1.2 1.5
V , Body Diode Forward Voltage (V)
SD
Figure 6. Diode Forward Characteristics
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