Power BJT. SSCP005GSB Datasheet

SSCP005GSB BJT. Datasheet pdf. Equivalent

SSCP005GSB Datasheet
Recommendation SSCP005GSB Datasheet
Part SSCP005GSB
Description High Frequency High Gain PNP Power BJT
Feature SSCP005GSB; SSCP005GSB High Frequency High Gain PNP Power BJT  Features PNP BJT VCE -40v VBE -6v Vcesat typ.
Manufacture AFSEMI
Datasheet
Download SSCP005GSB Datasheet




AFSEMI SSCP005GSB
SSCP005GSB
High Frequency High Gain PNP Power BJT
Features
PNP BJT
VCE
-40v
VBE
-6v
Vcesat typ
-150mv
Ic
-3A
Applications
Load Switch
Portable Devices
DCDC Conversion
General Description
This device is produced with advanced high carrier density
technology, which is especially used to minimize saturation
voltage drop. This device particularly suits low voltage
applications such as portable equipment, power management
and other battery powered circuits, and low in-line power
dissipation are needed in a very small outline surface mount
package. Excellent thermal and electrical capabilities.
Package Information
Pin configuration
Pin configuration(Top view)
SSC-1V0
http://www.afsemi.com
1/4
Analog Future



AFSEMI SSCP005GSB
SSCP005GSB
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Collector Current TA = 25°C (Note 1)
Collector Current TA = 70°C (Note 2)
IC
Pulse collector current(Note 3)
ICM
Power Dissipation Derating above TA = 25°C(Note 1)
Power Dissipation Derating above TA = 70°C(Note 2)
Pd
Operating and Storage Junction Temperature Range
TJ, TSTG
Note1. Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper.
Note2. Surface mounted on FR-4 board using minimum pad size, 1oz copper
Note3. Pulse width=300µs, Duty Cycle
P-channel
-40
-40
-6
-3
-2
-6
1.2
0.8
-55 to +150
Unit
V
V
V
A
A
W
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut off current
Emitter cut off current
DC Current Gain
Collector-Emitter Saturation Voltage
Note 4.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
HFE
VCESAT
Test Conditions
IC=-50uAIB=0mA
IC=-1mAIB=0mA
IE=-1uAIC=0mA
VCB=-20V,IE=0mA
VEB=-4V,IC=0mA
VCE=-2V,IC=-500mA
IC=-1.5A,IB=-80mA
Surface Mounted on FR4 Board, t < 10 sec.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
Min Typ Max
-40
-40
-6
1
1
100 200 350
-0.15 -0.2
Unit
V
V
V
uA
uA
V
SSC-1V0
http://www.afsemi.com
2/4
Analog Future



AFSEMI SSCP005GSB
Typical Performance Characteristics
SSCP005GSB
SSC-1V0
http://www.afsemi.com
3/4
Analog Future







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)