Document
SSC8PN0GN2
High Frequency High Gain PNP with NPN Power BJT
Features
Applications
PNP BJT
VCE -40V
VBE -6V
VCE(SAT) typ -150mV
Ic -1A
battery powered circuits low in-line power dissipation circuits
NPN BJT 40V
6V
120mV
0.2A
Pin configuration
General Description
SSC8PN0GN2 combines an Power NPN Transistor and a Power PNP Transistor . The tiny and thin outline saves PCB consumption.
Pin configuration(Top view)
Package Information
SSC-1V0
http://www.afsemi.com
1/5
Analog Future
SSC8PN0GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
NPN Transistor
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage Collector Current (Note 1) Pulse collector current(Note3)
VEBO IC ICM
PNP Transistor
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage Collector Current (Note 1) Pulse collector current(Note3)
VEBO IC ICM
Power Dissipation (Note 1)
.