Power BJT. SSC8PN0GN2 Datasheet

SSC8PN0GN2 BJT. Datasheet pdf. Equivalent

SSC8PN0GN2 Datasheet
Recommendation SSC8PN0GN2 Datasheet
Part SSC8PN0GN2
Description High Frequency High Gain PNP Power BJT
Feature SSC8PN0GN2; SSC8PN0GN2 High Frequency High Gain PNP with NPN Power BJT  Features  Applications PNP BJT VC.
Manufacture AFSEMI
Datasheet
Download SSC8PN0GN2 Datasheet




AFSEMI SSC8PN0GN2
SSC8PN0GN2
High Frequency High Gain PNP with NPN Power BJT
Features
Applications
PNP BJT
VCE
-40V
VBE
-6V
VCE(SAT) typ
-150mV
Ic
-1A
battery powered circuits
low in-line power dissipation circuits
NPN BJT 40V
6V
120mV
0.2A
Pin configuration
General Description
SSC8PN0GN2 combines an Power NPN Transistor and a
Power PNP Transistor . The tiny and thin outline saves PCB
consumption.
Pin configuration(Top view)
Package Information
SSC-1V0
http://www.afsemi.com
1/5
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AFSEMI SSC8PN0GN2
SSC8PN0GN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
NPN Transistor
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current (Note 1)
Pulse collector current(Note3)
VEBO
IC
ICM
PNP Transistor
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
Collector Current (Note 1)
Pulse collector current(Note3)
VEBO
IC
ICM
Power Dissipation (Note 1)
Power Dissipation and temperature
Pc
Storage and Junction Temperature Range
TJ,
P-channel
60
40
6
0.2
0.4
-40
-40
-6
-1
-2
1
-55~+150
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance (Note 1)
Junction-to-Ambient Thermal Resistance (Note 2)
Symbol
RθJA
RθJA
Value
115
220
Unit
V
V
V
A
A
V
V
V
A
A
W
°C
Unit
°C/W
°C/W
Order information
Device
Package
Marking
SSC8PN0GN2
DFN2X2-6
SSC-1V0
http://www.afsemi.com
2/5
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AFSEMI SSC8PN0GN2
SSC8PN0GN2
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 3)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut off current
Emitter cut off current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut off current
Emitter cut off current
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
Test Conditions
Min Typ Max
NPN Transistor
BVCBO
BVCEO
BVEBO
IC=10uAIE=0mA
IC=1mAIB=0mA
IE=10uAIC=0mA
60
40
6
ICBO VCB=30V,IE=0mA
90
IEBO
HFE
HFE
VEB=3,IC=0mA
VCE=1V,IC=-10mA
VCE=1V,IC=100mA
90
100 300
30 300
VCE(SAT)
IC=50mA,IB=5mA
0.12 0.3
V BE(SAT)
fT
IC=-50mA ,IB=5mA
VCE=-20VIc=10mAf=100MHz 250
0.95
td Vcc=3V,VBE=0.5V
tr Ic=10mA,Ib1=1.0mA
35
35
ts Vcc=3V,Ic=10mA,
tf Ib1=-1b2=1.0mA
200
50
PNP Transistor
BVCBO
IC=-50uAIE=0mA
-60
BVCEO
IC=-1mAIB=0mA
-40
BVEBO
IE=-50uAIC=0mA
-6
ICBO VCB=-35V,IE=0mA
60
IEBO VEB=-4,IC=0mA
60
HFE
HFE
VCE(SAT)
VCE=-1V,IC=-100mA
VCE=-2V,IC=500mA
IC=-800mA,IB=-80mA
80 300
100 400
0.15 0.25
V BE(SAT)
fT
IC=-800mA,IB=-80mA
VCE=-6VIc=20mAf=30MHz
150
1.1
td Vcc=-3V,VBE=0.5V
tr Ic=10mA,Ib1=1.0mA
35
35
ts Vcc=-3V,Ic=10mA,
tf Ib1=-1b2=1.0mA
200
50
Unit
V
V
V
nA
nA
V
V
MHz
ns
ns
ns
ns
V
V
V
nA
nA
V
V
MHz
ns
ns
ns
ns
Note1. Surface mounted on FR-4 Board using 1 square inch pad size, 1oz copper.
Note2. Surface mounted on FR-4 board using minimum pad size, 1oz copper
Note3. Pulse width=300µs, Duty Cycle
SSC-1V0
http://www.afsemi.com
3/5
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