Mode MOSFET. SSC8P20AN2 Datasheet

SSC8P20AN2 MOSFET. Datasheet pdf. Equivalent

SSC8P20AN2 Datasheet
Recommendation SSC8P20AN2 Datasheet
Part SSC8P20AN2
Description N-Channel Enhancement Mode MOSFET
Feature SSC8P20AN2; SSC8P20AN2 N-Channel Enhancement Mode MOSFET with PNP Transistor  Features PNP Transistor VCE VB.
Manufacture AFSEMI
Datasheet
Download SSC8P20AN2 Datasheet




AFSEMI SSC8P20AN2
SSC8P20AN2
N-Channel Enhancement Mode MOSFET with PNP Transistor
Features
PNP Transistor
VCE VBE
-40V -6V
VCESATMAX
-500mV
IC
-1.0A
Applications
Li Battery Charging
Pin configuration
General Description
SSC8P20AN2 combines an N-Channel enhancement
mode power MOSFET which is produced with high cell
density and a Media Power PNP Transistor . The tiny
and thin outline saves PCB consumption.
Package Information
Top View
SSC-1V0
http://www.afsemi.com
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AFSEMI SSC8P20AN2
SSC8P20AN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS 20
VGS ±8
V
Drain Current (Note 1)
Continuous
0.8
ID A
Pulsed
3
Collector-Emitter Voltage
VCEO
-40
V
Emitter-Base Voltage
VEBO
-6
A
Collector Current
Collector Pulsed
Power Dissipation Derating above TA = 25°C (Note 1)
IC
ICM
Pd
1.0
2
1.5
A
W
Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Note:1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
Symbol
Test Conditions
N-channel Enhancement Mode MOSFET
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250uA
Zero Gate Voltage Drain Current
IDSS
VDS = 16V, VGS = 0V
Gate-Body Leakage
IGSS VGS = ±12V, VDS = 0V
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250uA
Static Drain-Source On-Resistance
RDS (ON)
ID = 0.5A,VGS = 4.50V
ID = 0.5A,VGS = 2.50V
ID = 0.35A,VGS = 1.80V
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
Turn-Off Fall Time
tf
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
PNP Transistor
Collector-Base Breakdown Voltage
BVCBO
IC=-50uA
Collector-Emitter Breakdown Voltage
BVCEO
IC=-1mA
Emitter-Base Breakdown Voltage
BVEBO
IE=-50uA
DC Current Gain
HFE
VCE=-2V,IC=500mA
Collector-Emitter Saturation Voltage
VCESAT
IC=-800mA,IB=-80mA
Note : 2. Short duration test pulse used to minimize self-heating effect.
SSC-1V0
http://www.afsemi.com
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±100
0.35 0.6 1
255 450
--
390 765
--
520 850
-- 6 --
-- 28 --
-- 42 --
-- 120 --
-- 130 --
-- 20 --
-- 16 --
V
uA
nA
V
mR
ns
pF
-40 -- --
-40
-6
100 360
-0.15 -0.5
V
V
V
V
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AFSEMI SSC8P20AN2
SSC8P20AN2
N-channel MOSFET Typical Performance Characteristics
SSC-1V0
http://www.afsemi.com
3/5
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