Mode MOSFET. SSC8P22CN2 Datasheet

SSC8P22CN2 MOSFET. Datasheet pdf. Equivalent

SSC8P22CN2 Datasheet
Recommendation SSC8P22CN2 Datasheet
Part SSC8P22CN2
Description N-Channel Enhancement Mode MOSFET
Feature SSC8P22CN2; SSC8P22CN2 N-Channel Enhancement Mode MOSFET  Features PNP Transistor VCE VBE -40v -6v Vcesat m.
Manufacture AFSEMI
Datasheet
Download SSC8P22CN2 Datasheet




AFSEMI SSC8P22CN2
SSC8P22CN2
N-Channel Enhancement Mode MOSFET
Features
PNP Transistor
VCE VBE
-40v -6v
Vcesat max
-200mv
Ic
-3.0A
Applications
Li Battery Charging
Pin configuration
General Description
SSC8P22CN2 combines an N-Channel enhancement mode
MOSFET and a Media Power PNP Transistor. The tiny and
thin outline saves PCB consumption.
Package Information
Pin configuration(Top view)
SSC-1V0
http://www.afsemi.com
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AFSEMI SSC8P22CN2
SSC8P22CN2
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS ±12
Drain Current (Note 1)
Continuous
Pulsed
ID
IDM
0.8
3
Collector-Emitter Voltage
VCEO
-30
Emitter-Base Voltage
VEBO
-6
Collector Current(Note 1)
Continuous
Pulsed
Power Dissipation Derating above TA = 25°C (Note 1)
IC
ICM
Pd
-3
-12
1350
Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Note1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inches. The rating is for each chip in the package.
Unit
V
A
V
V
A
mW
°C
Electrical Characteristics @ TA = 25°C unless otherwise specified
Parameter (Note 2)
DrainSource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate Threshold Voltage
Static Drain-Source On-Resistance
Turn-On Delay Time
Turn-Off Delay Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage(1)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector cut off current
Emitter cut off current
DC Current Gain
Symbol
Test Conditions
N-Channel mosfet
V(BR)DSS
VGS = 0 V, ID = 250μA
IDSS VDS = 16V, VGS = 0V
IGSS VGS = ±12V, VDS = 0V
VGS(TH)
VDS = VGS, ID = 250uA
RDS (ON)
td(on)
td(off)
ID =0.5A,VGS = 4.5V
ID = 0.5A,VGS = 2.5V
ID = 0.35A,VGS = 1.8V
VDD = -6V, RL = 6R, ΙD = −1Α,
VGEN = -4.5V, RG = 6R
CISS
COSS
CRSS
VDS = -16V, VGS = 0V,
f = 200KHz
VSD VGS = 0 V, IS = 150mA
PNP Transistor
BVCBO
IC=-50uAIB=0mA
BVCEO
IC=-1mAIE=0mA
BVEBO
IE=-50uAIC=0mA
ICBO VCB=-30V,IE=0mA
IEBO VEB=-5V,IC=0mA
HFE
VCE=-2V,IC=-500mA
Collector-Emitter Saturation Voltage
VCESAT
IC=-1.5A,IB=-80mA
Note 2. Short duration test pulse used to minimize self-heating effect.
SSC-1V0
http://www.afsemi.com
Min Typ Max Unit
20 -- --
-- -- 1
-- -- ±10
0.35 0.6 1
-- 255 450
-- 390 765
-- 520 850
-- 6 --
-- 28 --
-- 130 --
-- 20 --
-- 16 --
-- 0.68 1.2
V
uA
uA
V
mR
Ns
pF
V
-40
-40
-6
100
100
100 350
0.15 -0.2
V
V
V
nA
nA
V
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AFSEMI SSC8P22CN2
Thermal resistance ratings
Parameter
Junction-to-Ambient Thermal Resistance a
Junction-to-Ambient Thermal Resistance b
SSC8P22CN2
Symbol
RθJA
RθJA
Value
105
155
Unit
°C/W
°C/W
Typical Performance Characteristics
5
V = 3.5V,4.0V,4.5V
GS
4 V = 3.0V
GS
V = 2.5V
GS
V = 2.0V
GS
3
2
1
V = 1.5V
GS
0
0.0 0.5 1.0 1.5 2.0 2.5
V , Drain-Source Voltage (V)
DS
Figure 1. Output Characteristics
1.0
V = 1.8V
GS
0.8
3.0
0.6
0.4
V = 2.5V
GS
0.2
V = 4.5V
GS
0.0
012345
I , Drain Current (A)
D
Figure 3. On Resistance vs. Drain Current
3.5
V = 3.0V
DS
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5
V , Gate-Source Voltage(V)
GS
Figure 2. Transfer Characteristics
200
150
100 C i s s
50 C o s s
Crss
0
0 5 10 15 20
V , Drain-Source Voltage (V)
DS
Figure 4. Capacitance
SSC-1V0
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