SSC8K21JN3
P-Channel Enhancement Mode MOSFET with Schottky Diode
Features
P-MOSFET VDS VGS
-20V ±8V
Schottky VR IR 2...
SSC8K21JN3
P-Channel Enhancement Mode MOSFET with
Schottky Diode
Features
P-MOSFET VDS VGS
-20V ±8V
Schottky VR IR 20V 15uA
RDSon TYP 130mR@-4V5 170mR@-2V5 230mR@-1V8
VF 370mV
ID -2A
IO 1A
Applications
Li Battery Charging High Side DC/DC Converter High Side Driver for Brushless DC
Motor
Power Management in Portable,
Battery Powered Devices
Pin configuration
General Description
SSC8K21JN3 combines a P-Channel enhancement mode power MOSFET which is produced with high cell density and DMOS trench technology and a low forward voltage
schottky diode. the tiny and thin outline saves PCB consumption.
Package Information
DFN3X2-8L
Pin connections
SSC-1V0
http://www.afsemi.com
1/6
Analog Future
SSC8K21JN3
SSC-1V0
http://www.afsemi.com
2/6
Analog Future
SSC8K21JN3
Absolute Maximum Ratings @ TA = 25°C unless otherwise specified
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage Gate-Source Voltage
VDS -20 VGS ±8
V
Drain Current (...
