N-Channel MOSFET. 2SK1317 Datasheet

2SK1317 MOSFET. Datasheet pdf. Equivalent

2SK1317 Datasheet
Recommendation 2SK1317 Datasheet
Part 2SK1317
Description Silicon N-Channel MOSFET
Feature 2SK1317; 2SK1317 Silicon N Channel MOS FET Application High speed power switching Features • High breakdown .
Manufacture Renesas
Datasheet
Download 2SK1317 Datasheet




Renesas 2SK1317
2SK1317
Silicon N Channel MOS FET
Application
High speed power switching
Features
High breakdown voltage VDSS = 1500 V
High speed switching
Low drive current
No secondary breakdown
Suitable for switching regulator, DC-DC converter and motor driver
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
REJ03G0929-0200
(Previous: ADE-208-1268)
Rev.2.00
Sep 07, 2005
D
1. Gate
2. Drain
(Flange)
3. Source
S
Rev.2.00 Sep 07, 2005 page 1 of 6



Renesas 2SK1317
2SK1317
Absolute Maximum Ratings
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at TC = 25°C
Electrical Characteristics
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
Pch*2
Tch
Tstg
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse recovery
time
Note: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
1500
2.0
0.45
Typ
9
0.75
990
125
60
17
70
110
60
0.9
1750
Ratings
1500
±20
2.5
7
2.5
100
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Max
±1
500
4.0
12
Unit
V
µA
µA
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 1200 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 2 A, VGS = 15 V *3
S ID = 1 A, VDS = 20 V *3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns RL = 15
ns
ns
V IF = 2 A, VGS = 0
ns IF = 2 A, VGS = 0,
diF/dt = 100 A/µs
Rev.2.00 Sep 07, 2005 page 2 of 6



Renesas 2SK1317
2SK1317
Main Characteristics
Power vs. Temperature Derating
120
80
40
0 50 100 150
Case Temperature TC (°C)
Typical Output Characteristics
5
Pulse Test
4
15 V
10 V
8V
7V
3
6V
2
5V
1
VGS = 4 V
0 20 40 60 80 100
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
50
Pulse Test
40
ID = 3 A
30
20 2 A
1A
10
0.5 A
0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Rev.2.00 Sep 07, 2005 page 3 of 6
Maximum Safe Operation Area
10
3
1.0
0.3
0.1
0.03
DC OPpWer=at1io0nm(TsC1(m1=1sS205h0°o1µCt0)s)µs
Operation in this area
is limited by RDS (on)
Ta = 25°C
0.01
10 30 100 300 1,000
3,000
10,000
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics
2.0
1.6
VDS = 20 V
Pulse Test
1.2
0.8 75°C
TC = 25°C
0.4 –25°C
0 2 4 6 8 10
Gate to Source Voltage VGS (V)
Static Drain to Source on State
Resistance vs. Drain Current
50
20
VGS = 10 V
15 V
10
5
2
Pulse Test
1.0
0.5
0.1 0.2
0.5 1.0 2
5
Drain Current ID (A)
10







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