Power MOSFET. 16N06LE Datasheet

16N06LE MOSFET. Datasheet pdf. Equivalent

16N06LE Datasheet
Recommendation 16N06LE Datasheet
Part 16N06LE
Description N-Channel Logic Level Power MOSFET
Feature 16N06LE; Data Sheet RFD16N06LESM October 2013 N-Channel Logic Level Power MOSFET 60 V, 16 A, 47 mΩ These ar.
Manufacture Fairchild Semiconductor
Datasheet
Download 16N06LE Datasheet




Fairchild Semiconductor 16N06LE
Data Sheet
RFD16N06LESM
October 2013
N-Channel Logic Level Power MOSFET
60 V, 16 A, 47 mΩ
These are N-Channel power MOSFETs manufactured
using a modern process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, relay drivers and emitter switches for bipolar
transistors. This performance is accomplished through a
special gate oxide design which provides full rated
conductance at gate bias in the 3V to 5V range, thereby
facilitating true on-off power control directly from logic level
(5V) integrated circuits.
Formerly developmental type TA49027.
Ordering Information
PART NUMBER
PACKAGE
RFD16N06LESM9A TO-252AA
BRAND
16N06LE
Features
• 16A, 60V
• rDS(ON) = 0.047
• Temperature Compensating PSPICE® Model
• Can be Driven Directly from CMOS, NMOS, TTL
Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
Packaging
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
S
©2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. C0



Fairchild Semiconductor 16N06LE
RFD16N06LESM
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD16N06LESM
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20k) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg
60
60
+10, -8
16
Refer to Peak Current Curve
Refer to UIS Curve
90
0.606
-55 to 175
300
260
V
V
V
A
W
W/oC
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(5)
Qg(TH)
ID = 250µA, VGS = 0V, Figure 11
VGS = VDS, ID = 250µA, Figure 10
VDS = 55V, VGS = 0V
VDS = 50V, VGS = 0V, TC = 150oC
VGS = +10, -8V
ID = 16A, VGS = 5V
VDD = 30V, ID = 16A, RL = 1.88,
VGS = 5V, RGS = 5
Figures 16, 17
VGS = 0V to 10V
VGS = 0V to 5V
VGS = 0V to 1V
VDD = 48V,
ID = 16A, RL = 3
Figures 18, 19
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
CISS
COSS
CRSS
RθJC
RθJA
VDS = 25V, VGS = 0V,
f = 1MHz
Figure 12
TO-252AA
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage (Note 2)
VSD
ISD = 16A
Diode Reverse Recovery Time
trr ISD = 16A, dISD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
MIN TYP MAX UNITS
60 -
-
V
1-3
V
- - 1 µA
- - 250 µA
- - 10 µA
-
- 0.047
- - 100 ns
- 11 -
ns
- 60 -
ns
- 48 -
ns
- 35 -
ns
- - 115 ns
- 51 62 nC
- 29 35 nC
-
1.8 2.6
nC
- 1350 -
pF
- 300 -
pF
- 90 -
pF
-
-
1.65
oC/W
- - 80 oC/W
MIN TYP MAX UNITS
- - 1.5 V
- - 125 ns
©2002 Fairchild Semiconductor Corporation
RFD16N06LESM Rev. C0



Fairchild Semiconductor 16N06LE
RFD16N06LESM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
15
10
5
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
200
TC = 25oC
100 TJ = MAX RATED
100µs
10
1
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
VDSS MAX = 60V
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
1ms
10ms
100
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
500
TC = 25oC
VGS = 10V
100
VGS = 5V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
( )I = I25
175 - TC
150
1010-6
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
10-5
10-4
10-3 10-2
t, PULSE WIDTH (s)
10-1
100
FIGURE 4. PEAK CURRENT CAPABILITY
101
100
STARTING TJ = 25oC
STARTING TJ = 150oC
10
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD)
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]
1
0.01
0.1
1
tAV, TIME IN AVALANCHE (ms)
10
FIGURE 5. UNCLAMPED INDUCTIVE SWITCHING
©2002 Fairchild Semiconductor Corporation
100
TC =25oC
80
VGS = 10V
VGS = 5V
VGS = 4.5V
60
VGS = 4V
40
VGS = 3V
20
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
0
0 1.5 3.0 4.5 6.0 7.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 6. SATURATION CHARACTERISTICS
RFD16N06LESM Rev. C0







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